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Transistors(6554)
| Image | Name | Manufacturer | Quantity | Mfr | Series | Package | Product Status | Voltage - Rated | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Frequency | Technology | Power - Max | Input | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Current Rating (Amps) | Test Condition | Current - Test | Power - Output | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Noise Figure | Reverse Recovery Time (trr) | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Voltage - Test | Current - Collector Cutoff (Max) | NTC Thermistor | Input Capacitance (Cies) @ Vce | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay General Semiconductor - Diodes Division VS-GT50TP60N | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Obsolete | 175°C (TJ) | Chassis Mount | INT-A-PAK (3 + 4) | GT50 | 208 W | Standard | INT-A-PAK | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VSGT50TP60N | EAR99 | 8541.29.0095 | 24 | Half Bridge | Trench | 600 V | 85 A | 2.1V @ 15V, 50A | 1 mA | No | 3.03 nF @ 30 V | |||||||||||||||||||||||||||||||||
|
Vishay General Semiconductor - Diodes Division VS-GT75NP120N | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Obsolete | -40°C ~ 150°C (TJ) | Chassis Mount | INT-A-PAK (3 + 4) | GT75 | 446 W | Standard | INT-A-PAK | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VSGT75NP120N | EAR99 | 8541.29.0095 | 24 | Single | - | 1200 V | 150 A | 2.08V @ 15V, 75A (Typ) | 1 mA | No | 9.45 nF @ 30 V | |||||||||||||||||||||||||||||||||
| Infineon Technologies IRGP6650DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | - | Tube | Obsolete | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | Standard | 306 W | TO-247AC | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 25 | 400V, 35A, 10Ohm, 15V | 50 ns | - | 600 V | 80 A | 105 A | 1.95V @ 15V, 35A | 300µJ (on), 630µJ (off) | 75 nC | 40ns/105ns | |||||||||||||||||||||||||||||||||||
|
Vishay General Semiconductor - Diodes Division VS-100MT060WDF | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tray | Obsolete | 150°C (TJ) | Chassis Mount | 16-MTP Module | 100MT060 | 462 W | Standard | MTP | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VS100MT060WDF | EAR99 | 8541.29.0095 | 105 | - | 600 V | 121 A | 2.29V @ 15V, 60A | 100 µA | Yes | 9.5 nF @ 30 V | ||||||||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division VS-20MT120UFAPBF | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tray | Obsolete | -40°C ~ 150°C (TJ) | Chassis Mount | 16-MTP Module | 20MT120 | 240 W | Standard | MTP | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VS20MT120UFAPBF | EAR99 | 8541.29.0095 | 105 | Full Bridge Inverter | NPT | 1200 V | 20 A | 4.66V @ 15V, 40A | 250 µA | No | 3.79 nF @ 30 V | |||||||||||||||||||||||||||||||||
| Texas Instruments CSD75208W1015T | Texas Instruments |
Min: 1 Mult: 1 |
/image/Texas Instruments | NexFET™ | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFBGA, DSBGA | CSD75208 | MOSFET (Metal Oxide) | 750mW | 6-DSBGA (1x1.5) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 250 | 2 P-Channel (Dual) Common Source | 20V | 1.6A | 68mOhm @ 1A, 4.5V | 1.1V @ 250µA | 2.5nC @ 4.5V | 410pF @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| onsemi FGI3040G2-F085 | onsemi |
Min: 1 Mult: 1 |
/image/onsemi | Automotive, AEC-Q101, EcoSPARK® | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | FGI3040 | Logic | 150 W | I2PAK (TO-262) | download | ROHS3 Compliant | Not Applicable | REACH Unaffected | EAR99 | 8541.29.0095 | 400 | - | - | 400 V | 41 A | 1.25V @ 4V, 6A | - | 21 nC | 900ns/4.8µs | |||||||||||||||||||||||||||||||||||
| onsemi FGB3040G2-F085 | onsemi |
Min: 1 Mult: 1 |
/image/onsemi | Automotive, AEC-Q101, EcoSPARK® | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | FGB3040 | Logic | 150 W | D²PAK (TO-263) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 800 | - | - | 400 V | 41 A | 1.25V @ 4V, 6A | - | 21 nC | 900ns/4.8µs | |||||||||||||||||||||||||||||||||||
| onsemi FGB3245G2-F085 | onsemi |
Min: 1 Mult: 1 |
/image/onsemi | Automotive, AEC-Q101, EcoSPARK® | Tape & Reel (TR) | Active | -40°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | FGB3245 | Logic | 150 W | D²PAK (TO-263) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 800 | - | - | 450 V | 23 A | 1.25V @ 4V, 6A | - | 23 nC | 900ns/5.4µs | |||||||||||||||||||||||||||||||||||
| Vishay Siliconix SIS612EDNT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S | SIS612 | MOSFET (Metal Oxide) | PowerPAK® 1212-8S | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 20 V | 50A (Tc) | 2.5V, 4.5V | 3.9mOhm @ 14A, 4.5V | 1.2V @ 1mA | 70 nC @ 10 V | ±12V | 2060 pF @ 10 V | - | 3.7W (Ta), 52W (Tc) | ||||||||||||||||||||||||||||||||||
| Texas Instruments CSD18532Q5BT | Texas Instruments |
Min: 1 Mult: 1 |
/image/Texas Instruments | NexFET™ | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | CSD18532 | MOSFET (Metal Oxide) | 8-VSONP (5x6) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 250 | N-Channel | 60 V | 100A (Ta) | 4.5V, 10V | 3.2mOhm @ 25A, 10V | 2.2V @ 250µA | 58 nC @ 10 V | ±20V | 5070 pF @ 30 V | - | 3.2W (Ta), 156W (Tc) | |||||||||||||||||||||||||||||||||
| onsemi FCPF380N65FL1 | onsemi |
Min: 1 Mult: 1 |
/image/onsemi | FRFET®, SuperFET® II | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | FCPF380 | MOSFET (Metal Oxide) | TO-220F-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 650 V | 10.2A (Tc) | 10V | 380mOhm @ 5.1A, 10V | 5V @ 1mA | 43 nC @ 10 V | ±20V | 1680 pF @ 100 V | - | 33W (Tc) | |||||||||||||||||||||||||||||||||
| STMicroelectronics STL12N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
/image/STMicroelectronics | MDmesh™ | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | STL12 | MOSFET (Metal Oxide) | PowerFlat™ (5x6) HV | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 650 V | 5A (Tc) | 10V | 750mOhm @ 3A, 10V | 4V @ 250µA | 12.5 nC @ 10 V | ±25V | 410 pF @ 100 V | - | 48W (Tc) | |||||||||||||||||||||||||||||||||
| Nexperia USA Inc. PDTD143XUX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
/image/Nexperia USA Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | PDTD143 | 300 mW | SOT-323 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 934068345115 | EAR99 | 8541.21.0075 | 3,000 | 50 V | 500 mA | 500nA | NPN - Pre-Biased | 100mV @ 2.5mA, 50mA | 70 @ 50mA, 5V | 225 MHz | 4.7 kOhms | 10 kOhms | |||||||||||||||||||||||||||||||||||
| Vishay Siliconix SIHP28N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | SIHP28 | MOSFET (Metal Oxide) | TO-220AB | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 28A (Tc) | 10V | 123mOhm @ 14A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±30V | 2714 pF @ 100 V | - | 250W (Tc) | ||||||||||||||||||||||||||||||||||
| Vishay Siliconix SIHP33N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | SIHP33 | MOSFET (Metal Oxide) | TO-220AB | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 33A (Tc) | 10V | 98mOhm @ 16.5A, 10V | 4V @ 250µA | 155 nC @ 10 V | ±30V | 3454 pF @ 100 V | - | 278W (Tc) | ||||||||||||||||||||||||||||||||||
| Vishay Siliconix SIA466EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 | SIA466 | MOSFET (Metal Oxide) | PowerPAK® SC-70-6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 20 V | 25A (Tc) | 4.5V, 10V | 9.5mOhm @ 9A, 10V | 2.5V @ 250µA | 20 nC @ 10 V | ±20V | 620 pF @ 1 V | - | 3.5W (Ta), 19.2W (Tc) | ||||||||||||||||||||||||||||||||||
| Infineon Technologies IRG8P50N120KDPBF | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | - | Tube | Obsolete | -40°C ~ 150°C (TJ) | Through Hole | TO-247-3 | IRG8P | Standard | 350 W | TO-247AC | download | 1 (Unlimited) | REACH Unaffected | SP001549644 | EAR99 | 8541.29.0095 | 25 | 600V, 35A, 5Ohm, 15V | 170 ns | - | 1200 V | 80 A | 105 A | 2V @ 15V, 35A | 2.3mJ (on), 1.9mJ (off) | 315 nC | 35ns/190ns | |||||||||||||||||||||||||||||||||
| Toshiba Semiconductor and Storage TPWR8503NL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
/image/Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerWDFN | TPWR8503 | MOSFET (Metal Oxide) | 8-DSOP Advance | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 30 V | 150A (Tc) | 4.5V, 10V | 0.85mOhm @ 50A, 10V | 2.3V @ 1mA | 74 nC @ 10 V | ±20V | 6900 pF @ 15 V | - | 800mW (Ta), 142W (Tc) | ||||||||||||||||||||||||||||||||||
| STMicroelectronics STF16N50M2 | STMicroelectronics |
Min: 1 Mult: 1 |
/image/STMicroelectronics | MDmesh™ | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | STF16 | MOSFET (Metal Oxide) | TO-220 Full Pack | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 497-15114-5 | EAR99 | 8541.29.0095 | 50 | N-Channel | 500 V | 13A (Tc) | 10V | 280mOhm @ 6.5A, 10V | 4V @ 250µA | 19.5 nC @ 10 V | ±25V | 710 pF @ 100 V | - | 25W (Tc) | ||||||||||||||||||||||||||||||||
| STMicroelectronics STGFW30H65FB | STMicroelectronics |
Min: 1 Mult: 1 |
/image/STMicroelectronics | - | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-3PFM, SC-93-3 | STGFW30 | Standard | 58 W | TO-3PF-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | 400V, 30A, 10Ohm, 15V | Trench Field Stop | 650 V | 60 A | 120 A | 2V @ 15V, 30A | 151µJ (on), 293µJ (off) | 149 nC | 37ns/146ns | ||||||||||||||||||||||||||||||||||
|
Infineon Technologies IRG7T300SD12B | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | - | Box | Obsolete | -40°C ~ 150°C (TJ) | Chassis Mount | POWIR® 62 Module | IRG7T | 1800 W | Standard | POWIR® 62 | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 15 | Single | - | 1200 V | 600 A | 2.2V @ 15V, 300A | 4 mA | No | 41.5 nF @ 25 V | |||||||||||||||||||||||||||||||||||
| Vishay Siliconix SIS407ADN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | SIS407 | MOSFET (Metal Oxide) | PowerPAK® 1212-8 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 18A (Tc) | 1.8V, 4.5V | 9mOhm @ 15A, 4.5V | 1V @ 250µA | 168 nC @ 8 V | ±8V | 5875 pF @ 10 V | - | 3.7W (Ta), 39.1W (Tc) | ||||||||||||||||||||||||||||||||||
| Vishay Siliconix SQM120P04-04L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | Automotive, AEC-Q101, TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SQM120 | MOSFET (Metal Oxide) | TO-263 (D²Pak) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 800 | P-Channel | 40 V | 120A (Tc) | 4.5V, 10V | 4mOhm @ 30A, 10V | 2.5V @ 250µA | 330 nC @ 10 V | ±20V | 13980 pF @ 20 V | - | 375W (Tc) | ||||||||||||||||||||||||||||||||||
| Vishay Siliconix SIHB15N50E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SIHB15 | MOSFET (Metal Oxide) | D²PAK (TO-263) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 500 V | 14.5A (Tc) | 10V | 280mOhm @ 7.5A, 10V | 4V @ 250µA | 66 nC @ 10 V | ±30V | 1162 pF @ 100 V | - | 156W (Tc) | ||||||||||||||||||||||||||||||||||
| Vishay Siliconix SIHP15N50E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | SIHP15 | MOSFET (Metal Oxide) | TO-220AB | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 500 V | 14.5A (Tc) | 10V | 280mOhm @ 7.5A, 10V | 4V @ 250µA | 66 nC @ 10 V | ±30V | 1162 pF @ 100 V | - | 156W (Tc) | ||||||||||||||||||||||||||||||||||
| Vishay Siliconix SIHP20N50E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | SIHP20 | MOSFET (Metal Oxide) | TO-220AB | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 500 V | 19A (Tc) | 10V | 184mOhm @ 10A, 10V | 4V @ 250µA | 92 nC @ 10 V | ±30V | 1640 pF @ 100 V | - | 179W (Tc) | ||||||||||||||||||||||||||||||||||
| NXP USA Inc. A2T07D160W04SR3 | NXP USA Inc. |
Min: 1 Mult: 1 |
/image/NXP USA Inc. | - | Tape & Reel (TR) | Not For New Designs | 70 V | Surface Mount | NI-780S-4L | A2T07 | 803MHz | LDMOS | NI-780S-4L | ROHS3 Compliant | Not Applicable | REACH Unaffected | 935315451128 | EAR99 | 8541.29.0075 | 250 | Dual | - | 450 mA | 30W | 21.5dB | - | 28 V | ||||||||||||||||||||||||||||||||||||
| NXP USA Inc. MMRF1014NT1 | NXP USA Inc. |
Min: 1 Mult: 1 |
/image/NXP USA Inc. | - | Tape & Reel (TR) | Active | 68 V | Surface Mount | PLD-1.5 | MMRF1014 | 1.96GHz | LDMOS | PLD-1.5 | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | EAR99 | 8541.29.0075 | 1,000 | - | 50 mA | 4W | 18dB | - | 28 V | |||||||||||||||||||||||||||||||||||||
| Infineon Technologies AUIRF1405ZS-7TRL | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | HEXFET® | Tape & Reel (TR) | Not For New Designs | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | AUIRF1405 | MOSFET (Metal Oxide) | D2PAK (7-Lead) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 800 | N-Channel | 55 V | 120A (Tc) | 10V | 4.9mOhm @ 88A, 10V | 4V @ 150µA | 230 nC @ 10 V | ±20V | 5360 pF @ 25 V | - | 230W (Tc) |
