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Discrete Semiconductor Products(28073)
| Image | Name | Manufacturer | Quantity | Mfr | Series | Package | Product Status | Voltage - Rated | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Frequency | Technology | Power - Max | Structure | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Current Rating (Amps) | Current - Hold (Ih) (Max) | Test Condition | Current - Test | Power - Output | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - Off State | Current - On State (It (RMS)) (Max) | Voltage - Gate Trigger (Vgt) (Max) | Current - Non Rep. Surge 50, 60Hz (Itsm) | Current - On State (It (AV)) (Max) | Noise Figure | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Number of SCRs, Diodes | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Voltage - Test | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NXP USA Inc. BUK7E1R6-30E,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
/image/NXP USA Inc. | TrenchMOS™ | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | BUK7 | MOSFET (Metal Oxide) | I2PAK | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 30 V | 120A (Tc) | 10V | 1.6mOhm @ 25A, 10V | 4V @ 1mA | 154 nC @ 10 V | ±20V | 11960 pF @ 25 V | - | 349W (Tc) | |||||||||||||||||||||||||||||||||||||||||||||||
| NXP USA Inc. BUK9515-60E,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
/image/NXP USA Inc. | TrenchMOS™ | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | BUK95 | MOSFET (Metal Oxide) | TO-220AB | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 60 V | 54A (Tc) | 5V, 10V | 13mOhm @ 15A, 10V | 2.1V @ 1mA | 20.5 nC @ 5 V | ±10V | 2651 pF @ 25 V | - | 96W (Tc) | ||||||||||||||||||||||||||||||||||||||||||||||||
| NXP USA Inc. BUK951R6-30E,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
/image/NXP USA Inc. | TrenchMOS™ | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | BUK95 | MOSFET (Metal Oxide) | TO-220AB | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 30 V | 120A (Tc) | 5V, 10V | 1.4mOhm @ 25A, 10V | 2.1V @ 1mA | 113 nC @ 5 V | ±10V | 16150 pF @ 25 V | - | 349W (Tc) | ||||||||||||||||||||||||||||||||||||||||||||||||
| NXP USA Inc. BUK9E4R9-60E,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
/image/NXP USA Inc. | TrenchMOS™ | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | BUK9 | MOSFET (Metal Oxide) | I2PAK | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 60 V | 100A (Tc) | 5V, 10V | 4.5mOhm @ 25A, 10V | 2.1V @ 1mA | 65 nC @ 5 V | ±10V | 9710 pF @ 25 V | - | 234W (Tc) | ||||||||||||||||||||||||||||||||||||||||||||||||
| Infineon Technologies IDW40G65C5FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | CoolSiC™+ | Bulk | Discontinued at Digi-Key | Through Hole | TO-247-3 | IDW40G65 | SiC (Silicon Carbide) Schottky | PG-TO247-3-1 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 240 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 40 A | 0 ns | 1.4 mA @ 650 V | -55°C ~ 175°C | 40A | 1140pF @ 1V, 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||
| Infineon Technologies IDW10G65C5FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | CoolSiC™+ | Tube | Discontinued at Digi-Key | Through Hole | TO-247-3 | IDW10G65 | SiC (Silicon Carbide) Schottky | PG-TO247-3-41 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 240 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 10 A | 0 ns | 400 µA @ 650 V | -55°C ~ 175°C | 10A | 300pF @ 1V, 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||
| Infineon Technologies IPW50R190CEFKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | CoolMOS™ | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | IPW50R | MOSFET (Metal Oxide) | PG-TO247-3-1 | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 240 | N-Channel | 500 V | 18.5A (Tc) | 13V | 190mOhm @ 6.2A, 13V | 3.5V @ 510µA | 47.2 nC @ 10 V | ±20V | 1137 pF @ 100 V | - | 127W (Tc) | ||||||||||||||||||||||||||||||||||||||||||||||||
| Panasonic Electronic Components FK8V03030L | Panasonic Electronic Components |
Min: 1 Mult: 1 |
/image/Panasonic Electronic Components | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | MOSFET (Metal Oxide) | WMini8-F1 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 33 V | 12A (Ta) | 4.5V, 10V | 7mOhm @ 6A, 10V | 2.5V @ 1.73mA | 10.2 nC @ 4.5 V | ±20V | 1100 pF @ 10 V | - | 1W (Ta) | |||||||||||||||||||||||||||||||||||||||||||||||||
| Panasonic Electronic Components DMC5610N0R | Panasonic Electronic Components |
Min: 1 Mult: 1 |
/image/Panasonic Electronic Components | - | Tape & Reel (TR) | Discontinued at Digi-Key | Surface Mount | 6-SMD (5 Leads), Flat Lead | DMC5610 | 150mW | SMini5-F3-B | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 500nA | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | 250mV @ 500µA, 10mA | 80 @ 5mA, 10V | - | 4.7kOhms | 47kOhms | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division VS-VSKT430-16PBF | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Obsolete | -40°C ~ 150°C (TJ) | Chassis Mount | SUPER MAGN-A-PAK | VSKT430 | Series Connection - All SCRs | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.30.0080 | 1 | 500 mA | 1.6 kV | 675 A | 3 V | 15700A, 16400A | 430 A | 2 SCRs | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| Vishay Siliconix SIZ900DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 6-PowerPair™ | SIZ900 | MOSFET (Metal Oxide) | 48W, 100W | 6-PowerPair™ | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | 2 N-Channel (Half Bridge) | 30V | 24A, 28A | 7.2mOhm @ 19.4A, 10V | 2.4V @ 250µA | 45nC @ 10V | 1830pF @ 15V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||
| Vishay Siliconix SIZ916DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | SIZ916 | MOSFET (Metal Oxide) | 22.7W, 100W | 8-PowerPair® (6x5) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | 2 N-Channel (Half Bridge) | 30V | 16A, 40A | 6.4mOhm @ 19A, 10V | 2.4V @ 250µA | 26nC @ 10V | 1208pF @ 15V | - | ||||||||||||||||||||||||||||||||||||||||||||||||||
| STMicroelectronics FERD30M45CG-TR | STMicroelectronics |
Min: 1 Mult: 1 |
/image/STMicroelectronics | - | Tape & Reel (TR) | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | FERD30 | FERD (Field Effect Rectifier Diode) | D²PAK | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 1,000 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 45 V | 15A | 470 mV @ 15 A | 600 µA @ 45 V | 175°C (Max) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| Vishay Siliconix SI8424CDB-T1-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 4-UFBGA, WLCSP | SI8424 | MOSFET (Metal Oxide) | 4-Microfoot | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 8 V | 6.3A (Ta) | 1.2V, 4.5V | 20mOhm @ 2A, 4.5V | 800mV @ 250µA | 40 nC @ 4.5 V | ±5V | 2340 pF @ 4 V | - | 1.1W (Ta), 2.7W (Tc) | |||||||||||||||||||||||||||||||||||||||||||||||
| Vishay Siliconix SI1011X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SC-89, SOT-490 | SI1011 | MOSFET (Metal Oxide) | SC-89-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 12 V | 480mA (Ta) | 1.2V, 4.5V | 640mOhm @ 400mA, 4.5V | 800mV @ 250µA | 4 nC @ 4.5 V | ±5V | 62 pF @ 6 V | - | 190mW (Ta) | |||||||||||||||||||||||||||||||||||||||||||||||
| Vishay Siliconix SI8466EDB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 4-UFBGA, WLCSP | SI8466 | MOSFET (Metal Oxide) | 4-Microfoot | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 8 V | 3.6A (Ta) | 1.2V, 4.5V | 43mOhm @ 2A, 4.5V | 700mV @ 250µA | 13 nC @ 4.5 V | ±5V | 710 pF @ 4 V | - | 780mW (Ta), 1.8W (Tc) | |||||||||||||||||||||||||||||||||||||||||||||||
| Vishay Siliconix SI1480DH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SI1480 | MOSFET (Metal Oxide) | SC-70-6 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 100 V | 2.6A (Tc) | 4.5V, 10V | 200mOhm @ 1.9A, 10V | 3V @ 250µA | 5 nC @ 10 V | ±20V | 130 pF @ 50 V | - | 1.5W (Ta), 2.8W (Tc) | |||||||||||||||||||||||||||||||||||||||||||||||
| Microchip Technology MCP87018T-U/MF | Microchip Technology |
Min: 1 Mult: 1 |
/image/Microchip Technology | - | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MCP87018 | MOSFET (Metal Oxide) | 8-PDFN (5x6) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,300 | N-Channel | 25 V | 100A (Tc) | 3.3V, 10V | 1.9mOhm @ 25A, 10V | 1.6V @ 250µA | 37 nC @ 4.5 V | +10V, -8V | 2925 pF @ 12.5 V | - | 2.2W (Ta) | |||||||||||||||||||||||||||||||||||||||||||||||
| NXP USA Inc. AFT21S232SR5 | NXP USA Inc. |
Min: 1 Mult: 1 |
/image/NXP USA Inc. | - | Tape & Reel (TR) | Obsolete | 65 V | Chassis Mount | NI-780S | AFT21 | 2.11GHz | LDMOS | NI-780S | ROHS3 Compliant | Not Applicable | REACH Unaffected | 5A991G | 8541.29.0095 | 50 | - | 1.5 A | 50W | 16.7dB | - | 28 V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| Vishay Siliconix SIHP33N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | SIHP33 | MOSFET (Metal Oxide) | TO-220AB | download | ROHS3 Compliant | 1 (Unlimited) | SIHP33N60EGE3 | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 33A (Tc) | 10V | 99mOhm @ 16.5A, 10V | 4V @ 250µA | 150 nC @ 10 V | ±30V | 3508 pF @ 100 V | - | 278W (Tc) | |||||||||||||||||||||||||||||||||||||||||||||||
| Vishay Siliconix SIHB33N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SIHB33 | MOSFET (Metal Oxide) | D²PAK (TO-263) | download | ROHS3 Compliant | 1 (Unlimited) | SIHB33N60EGE3 | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 600 V | 33A (Tc) | 10V | 99mOhm @ 16.5A, 10V | 4V @ 250µA | 150 nC @ 10 V | ±30V | 3508 pF @ 100 V | - | 278W (Tc) | |||||||||||||||||||||||||||||||||||||||||||||||
| Infineon Technologies IRG7PH44K10DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | - | Tube | Obsolete | -40°C ~ 150°C (TJ) | Through Hole | TO-247-3 | IRG7PH | Standard | 320 W | TO-247AC | download | 1 (Unlimited) | REACH Unaffected | SP001544958 | EAR99 | 8541.29.0095 | 25 | 600V, 25A, 10Ohm, 15V | 130 ns | - | 1200 V | 70 A | 100 A | 2.4V @ 15V, 25A | 2.1mJ (on), 1.3mJ (off) | 200 nC | 75ns/315ns | |||||||||||||||||||||||||||||||||||||||||||||||
| Infineon Technologies IRGS4064DTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | - | Tape & Reel (TR) | Obsolete | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Standard | 101 W | D²PAK | download | 1 (Unlimited) | REACH Unaffected | SP001536502 | EAR99 | 8541.29.0095 | 800 | 400V, 10A, 22Ohm, 15V | 62 ns | Trench | 600 V | 20 A | 40 A | 1.91V @ 15V, 10A | 29µJ (on), 200µJ (off) | 32 nC | 27ns/79ns | ||||||||||||||||||||||||||||||||||||||||||||||||
| Nexperia USA Inc. PBSS4112PANP,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
/image/Nexperia USA Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-UFDFN Exposed Pad | PBSS4112 | 510mW | 6-HUSON (2x2) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0075 | 3,000 | 120V | 1A | 100nA (ICBO) | NPN, PNP | 120mV @ 50mA, 500mA | 60 @ 500mA, 2V | 120MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||
| STMicroelectronics STPS2200UF | STMicroelectronics |
Min: 1 Mult: 1 |
/image/STMicroelectronics | - | Tape & Reel (TR) | Active | Surface Mount | DO-221AA, SMB Flat Leads | STPS2200 | Schottky | SMBflat | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 5,000 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | 800 mV @ 2 A | 5 µA @ 200 V | -40°C ~ 175°C | 2A | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| Toshiba Semiconductor and Storage TPN4R712MD,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
/image/Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPN4R712 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | P-Channel | 20 V | 36A (Tc) | 2.5V, 4.5V | 4.7mOhm @ 18A, 4.5V | 1.2V @ 1mA | 65 nC @ 5 V | ±12V | 4300 pF @ 10 V | - | 42W (Tc) | ||||||||||||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division VS-1EFH01-M3/I | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | FRED Pt® | Tape & Reel (TR) | Active | Surface Mount | DO-219AB | 1EFH01 | Standard | DO-219AB (SMF) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 10,000 | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | 930 mV @ 1 A | 16 ns | 2 µA @ 100 V | -65°C ~ 175°C | 1A | - | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
Renesas Electronics America Inc RJS6004TDPP-EJ#T2 | Renesas Electronics America Inc |
Min: 1 Mult: 1 |
/image/Renesas Electronics America Inc | - | Tube | Obsolete | Through Hole | TO-220-2 Full Pack | Schottky | TO-220FP-2L | download | ROHS3 Compliant | 1 (Unlimited) | REACH Affected | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | 1.8 V @ 10 A | 15 ns | 10 µA @ 600 V | -55°C ~ 150°C | 10A | - | |||||||||||||||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics America Inc RJU6053WDPP-M0#T2 | Renesas Electronics America Inc |
Min: 1 Mult: 1 |
/image/Renesas Electronics America Inc | - | Tube | Obsolete | Through Hole | TO-220-2 Full Pack | Standard | TO-220FP-2L | download | ROHS3 Compliant | 1 (Unlimited) | REACH Affected | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | 3 V @ 20 A | 25 ns | 1 µA @ 600 V | -55°C ~ 150°C | 20A | - | |||||||||||||||||||||||||||||||||||||||||||||||||||
| Renesas Electronics America Inc UPA2820T1S-E2-AT | Renesas Electronics America Inc |
Min: 1 Mult: 1 |
/image/Renesas Electronics America Inc | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-PowerWDFN | MOSFET (Metal Oxide) | 8-HWSON (3.3x3.3) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 30 V | 22A (Tc) | 4.5V, 10V | 5.3mOhm @ 22A, 10V | - | 50 nC @ 10 V | ±20V | 2330 pF @ 10 V | - | 1.5W (Ta), 16W (Tc) |
