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Discrete Semiconductor Products(28073)
| Image | Name | Manufacturer | Quantity | Mfr | Series | Package | Product Status | Tolerance | Voltage - Rated | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Frequency | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Current Rating (Amps) | Test Condition | Current - Test | Power - Output | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Noise Figure | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Voltage - Test | Voltage - Zener (Nom) (Vz) | Impedance (Max) (Zzt) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Vishay Siliconix SIHG17N60D-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | SIHG17 | MOSFET (Metal Oxide) | TO-247AC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 500 | N-Channel | 600 V | 17A (Tc) | 10V | 340mOhm @ 8A, 10V | 5V @ 250µA | 90 nC @ 10 V | ±30V | 1780 pF @ 100 V | - | 277.8W (Tc) | ||||||||||||||||||||||||||||||||||||
| Vishay Siliconix SIHG24N65E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | SIHG24 | MOSFET (Metal Oxide) | TO-247AC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 500 | N-Channel | 650 V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 122 nC @ 10 V | ±30V | 2740 pF @ 100 V | - | 250W (Tc) | ||||||||||||||||||||||||||||||||||||
| Texas Instruments CSD19506KCS | Texas Instruments |
Min: 1 Mult: 1 |
/image/Texas Instruments | NexFET™ | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | CSD19506 | MOSFET (Metal Oxide) | TO-220-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 80 V | 100A (Ta) | 6V, 10V | 2.3mOhm @ 100A, 10V | 3.2V @ 250µA | 156 nC @ 10 V | ±20V | 12200 pF @ 40 V | - | 375W (Tc) | |||||||||||||||||||||||||||||||||||
| STMicroelectronics STGWT40H60DLFB | STMicroelectronics |
Min: 1 Mult: 1 |
/image/STMicroelectronics | - | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | STGWT40 | Standard | 283 W | TO-3P | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | 400V, 40A, 10Ohm, 15V | Trench Field Stop | 600 V | 80 A | 160 A | 2V @ 15V, 40A | 363µJ (off) | 210 nC | -/142ns | ||||||||||||||||||||||||||||||||||||
| STMicroelectronics STGWT40H65DFB | STMicroelectronics |
Min: 1 Mult: 1 |
/image/STMicroelectronics | - | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | STGWT40 | Standard | 283 W | TO-3P | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | 400V, 40A, 5Ohm, 15V | 62 ns | Trench Field Stop | 650 V | 80 A | 160 A | 2V @ 15V, 40A | 498µJ (on), 363µJ (off) | 210 nC | 40ns/142ns | |||||||||||||||||||||||||||||||||||
| STMicroelectronics STGWT60H60DLFB | STMicroelectronics |
Min: 1 Mult: 1 |
/image/STMicroelectronics | - | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | STGWT60 | Standard | 375 W | TO-3P | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | 400V, 60A, 5Ohm, 15V | Trench Field Stop | 600 V | 80 A | 240 A | 2V @ 15V, 60A | 626µJ (off) | 306 nC | -/160ns | ||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division MBR20100CT-M3/4W | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | TMBS® | Tube | Active | Through Hole | TO-220-3 | MBR20100 | Schottky | TO-220-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | MBR20100CT-M3/4WGI | EAR99 | 8541.10.0080 | 50 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 100 V | 10A | 800 mV @ 10 A | 100 µA @ 100 V | -65°C ~ 150°C | |||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division VBT1045C-E3/4W | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | TrenchMOS™ | Tube | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | VBT1045 | Schottky | TO-263AB (D²PAK) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VBT1045C-E3/4WGI | EAR99 | 8541.10.0080 | 1,000 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 45 V | 5A | 580 mV @ 5 A | 500 µA @ 45 V | -40°C ~ 150°C | |||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division VBT30L60C-E3/4W | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | TMBS® | Tube | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | VBT30L60 | Schottky | TO-263AB (D²PAK) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 50 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 60 V | 15A | 600 mV @ 15 A | 4 mA @ 60 V | 150°C (Max) | ||||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division VFT3060C-E3/4W | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | TMBS® | Tube | Active | Through Hole | TO-220-3 Full Pack, Isolated Tab | VFT3060 | Schottky | ITO-220AB | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VFT3060C-E3/4WGI | EAR99 | 8541.10.0080 | 50 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 60 V | 15A | 700 mV @ 15 A | 1.2 mA @ 60 V | -55°C ~ 150°C | |||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division VIT3060C-E3/4W | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | TMBS® | Tube | Active | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | VIT3060 | Schottky | TO-262AA | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VIT3060C-E3/4WGI | EAR99 | 8541.10.0080 | 1,000 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 60 V | 15A | 700 mV @ 15 A | 1.2 mA @ 60 V | -55°C ~ 150°C | |||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division VS-12CTQ040-N3 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | Through Hole | TO-220-3 | 12CTQ040 | Schottky | TO-220-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VS-12CTQ040-N3GI | EAR99 | 8541.10.0080 | 1,000 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 40 V | 12A | 730 mV @ 12 A | 800 µA @ 1200 V | -55°C ~ 175°C | |||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division VS-12CTQ045-N3 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | Through Hole | TO-220-3 | 12CTQ045 | Schottky | TO-220-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VS-12CTQ045-N3GI | EAR99 | 8541.10.0080 | 1,000 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 45 V | 6A | 730 mV @ 12 A | 800 µA @ 45 V | -55°C ~ 175°C | |||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division VS-12CWQ03FN-M3 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12CWQ03 | Schottky | D-PAK (TO-252AA) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VS-12CWQ03FN-M3GI | EAR99 | 8541.10.0080 | 75 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 30 V | 6A | 470 mV @ 6 A | 3 mA @ 30 V | -55°C ~ 150°C | |||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division VS-15ETH06-N3 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | FRED Pt® | Tube | Obsolete | Through Hole | TO-220-2 | 15ETH06 | Standard | TO-220AC | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VS-15ETH06-N3GI | EAR99 | 8541.10.0080 | 50 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | 2.2 V @ 15 A | 51 ns | 50 µA @ 600 V | -60°C ~ 175°C | 15A | - | ||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division VS-16CTU04-N3 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | FRED Pt® | Tube | Obsolete | Through Hole | TO-220-3 | 16CTU04 | Standard | TO-220-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VS-16CTU04-N3GI | EAR99 | 8541.10.0080 | 1,000 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 400 V | 8A | 1.3 V @ 8 A | 43 ns | 10 µA @ 400 V | -65°C ~ 175°C | ||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division VS-18TQ040-N3 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Obsolete | Through Hole | TO-220-2 | 18TQ040 | Schottky | TO-220AC | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VS-18TQ040-N3GI | EAR99 | 8541.10.0080 | 50 | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | 720 mV @ 36 A | 2.5 mA @ 40 V | -55°C ~ 175°C | 18A | 1400pF @ 5V, 1MHz | |||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division VS-20ETF04-M3 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Active | Through Hole | TO-220-2 | 20ETF04 | Standard | TO-220AC | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VS-20ETF04-M3GI | EAR99 | 8541.10.0080 | 1,000 | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | 1.3 V @ 20 A | 160 ns | 100 µA @ 400 V | -40°C ~ 150°C | 20A | - | ||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division MMBZ5245B-E3-08 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tape & Reel (TR) | Obsolete | ±5% | -55°C ~ 150°C | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MMBZ5245 | 225 mW | SOT-23-3 | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0050 | 3,000 | 100 nA @ 11 V | 15 V | 600 Ohms | |||||||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division SML4741A-E3/61 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tape & Reel (TR) | Active | ±5% | 150°C | Surface Mount | DO-214AC, SMA | SML4741 | 1 W | DO-214AC (SMA) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0050 | 1,800 | 5 µA @ 8.4 V | 11 V | 8 Ohms | ||||||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division TZM5250B-GS08 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | ±5% | 175°C | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | TZM5250 | 500 mW | SOD-80 MiniMELF | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0050 | 2,500 | 1.1 V @ 200 mA | 100 nA @ 15 V | 20 V | 25 Ohms | |||||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division TZMB12-GS08 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101, TZM | Tape & Reel (TR) | Active | ±2% | 175°C | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | TZMB12 | 500 mW | SOD-80 MiniMELF | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0050 | 2,500 | 1.5 V @ 200 mA | 100 nA @ 9.1 V | 12 V | 20 Ohms | |||||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division ZM4741A-GS08 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | ±5% | 175°C | Surface Mount | DO-213AB, MELF (Glass) | ZM4741 | 1 W | DO-213AB | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0050 | 1,500 | 5 µA @ 8.4 V | 11 V | 8 Ohms | ||||||||||||||||||||||||||||||||||||||||||
| NXP USA Inc. PSMN8R5-108ESQ | NXP USA Inc. |
Min: 1 Mult: 1 |
/image/NXP USA Inc. | - | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PSMN8 | MOSFET (Metal Oxide) | I2PAK | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 108 V | 100A (Tj) | 10V | 8.5mOhm @ 25A, 10V | 4V @ 1mA | 111 nC @ 10 V | ±20V | 5512 pF @ 50 V | - | 263W (Tc) | ||||||||||||||||||||||||||||||||||||
| NXP USA Inc. AFV09P350-04NR3 | NXP USA Inc. |
Min: 1 Mult: 1 |
/image/NXP USA Inc. | - | Tape & Reel (TR) | Active | 105 V | Surface Mount | OM-780-4L | AFV09 | 920MHz | LDMOS | OM-780-4L | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 935322054528 | 5A991G | 8541.29.0040 | 250 | Dual | - | 860 mA | 100W | 19.5dB | - | 48 V | ||||||||||||||||||||||||||||||||||||||
| Toshiba Semiconductor and Storage TPN5900CNH,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
/image/Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPN5900 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 150 V | 9A (Ta) | 10V | 59mOhm @ 4.5A, 10V | 4V @ 200µA | 7 nC @ 10 V | ±20V | 600 pF @ 75 V | - | 700mW (Ta), 39W (Tc) | ||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division VS-30CTH02SPBF | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Discontinued at Digi-Key | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 30CTH02 | Standard | TO-263AB (D²PAK) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VS-30CTH02SPBFGI | EAR99 | 8541.10.0080 | 50 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 200 V | 15A | 1.05 V @ 15 A | 26 ns | 10 µA @ 200 V | -65°C ~ 175°C | ||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division VS-40CTQ150SPBF | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Discontinued at Digi-Key | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 40CTQ150 | Schottky | TO-263AB (D²PAK) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VS-40CTQ150SPBFGI | EAR99 | 8541.10.0080 | 50 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 150 V | 20A | 1.16 V @ 40 A | 50 µA @ 150 V | -55°C ~ 175°C | |||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division VS-MBRB1045PBF | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Discontinued at Digi-Key | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MBRB10 | Schottky | TO-263AB (D²PAK) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VS-MBRB1045PBFGI | EAR99 | 8541.10.0080 | 50 | Fast Recovery =< 500ns, > 200mA (Io) | 45 V | 840 mV @ 20 A | 100 µA @ 45 V | -65°C ~ 150°C | 10A | 600pF @ 5V, 1MHz | |||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division S1JHE3_A/H | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | DO-214AC, SMA | S1J | Standard | DO-214AC (SMA) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 1,800 | Standard Recovery >500ns, > 200mA (Io) | 600 V | 1.1 V @ 1 A | 1.8 µs | 1 µA @ 600 V | -55°C ~ 150°C | 1A | 12pF @ 4V, 1MHz |
