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Discrete Semiconductor Products(28073)
| Image | Name | Manufacturer | Quantity | Mfr | Series | Package | Product Status | Tolerance | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Current - Hold (Ih) (Max) | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - Off State | Current - On State (It (RMS)) (Max) | Voltage - Gate Trigger (Vgt) (Max) | Current - Non Rep. Surge 50, 60Hz (Itsm) | Current - Gate Trigger (Igt) (Max) | Voltage - On State (Vtm) (Max) | Current - On State (It (AV)) (Max) | Current - Off State (Max) | SCR Type | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Zener (Nom) (Vz) | Impedance (Max) (Zzt) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rohm Semiconductor R6507KNJTL | Rohm Semiconductor |
Min: 1 Mult: 1 |
/image/Rohm Semiconductor | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | R6507 | MOSFET (Metal Oxide) | LPTS | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 650 V | 7A (Tc) | 10V | 665mOhm @ 2.4A, 10V | 5V @ 200µA | 14.5 nC @ 10 V | ±20V | 470 pF @ 25 V | - | 78W (Tc) | |||||||||||||||||||||||||||
 |
Vishay Siliconix SIZF918DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | TrenchFET® Gen IV | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | SIZF918 | MOSFET (Metal Oxide) | 3.4W (Ta), 26.6W (Tc), 3.7W (Ta), 50W (Tc) | 8-PowerPair® (6x5) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | 2 N-Channel (Dual), Schottky | 30V | 23A (Ta), 40A (Tc), 35A (Ta), 60A (Tc) | 4mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V | 2.4V @ 250µA, 2.3V @ 250µA | 22nC @ 10V, 56nC @ 10V | 1060pF @ 15V, 2650pF @ 15V | - | |||||||||||||||||||||||||||||
| Vishay Siliconix SIHD3N50DT4-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | D | Tube | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SIHD3 | MOSFET (Metal Oxide) | TO-252AA | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 500 V | 3A (Tc) | 10V | 3.2Ohm @ 1.5A, 10V | 5V @ 250µA | 12 nC @ 10 V | ±30V | 175 pF @ 100 V | - | 69W (Tc) | ||||||||||||||||||||||||||||
| Vishay Siliconix SIHFL110TR-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SIHFL110 | MOSFET (Metal Oxide) | SOT-223 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 100 V | 1.5A (Tc) | 10V | 540mOhm @ 900mA, 10V | 4V @ 250µA | 8.3 nC @ 10 V | ±20V | 180 pF @ 25 V | - | 2W (Ta), 3.1W (Tc) | ||||||||||||||||||||||||||||
| Vishay Siliconix SIHB6N80E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | E | Tube | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SIHB6 | MOSFET (Metal Oxide) | D²PAK (TO-263) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 800 V | 5.4A (Tc) | 10V | 940mOhm @ 3A, 10V | 4V @ 250µA | 44 nC @ 10 V | ±30V | 827 pF @ 100 V | - | 78W (Tc) | ||||||||||||||||||||||||||||
| Vishay Siliconix SIHFZ48S-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tube | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SIHFZ48 | MOSFET (Metal Oxide) | D²PAK (TO-263) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 60 V | 50A (Tc) | 10V | 18mOhm @ 43A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 3.7W (Ta), 190W (Tc) | ||||||||||||||||||||||||||||
| Vishay Siliconix SIHF530STRL-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SIHF530 | MOSFET (Metal Oxide) | D²PAK (TO-263) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 800 | N-Channel | 100 V | 14A (Tc) | 10V | 160mOhm @ 8.4A, 10V | 4V @ 250µA | 26 nC @ 10 V | ±20V | 670 pF @ 25 V | - | 3.7W (Ta), 88W (Tc) | ||||||||||||||||||||||||||||
| Rohm Semiconductor R6524ENJTL | Rohm Semiconductor |
Min: 1 Mult: 1 |
/image/Rohm Semiconductor | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | R6524 | MOSFET (Metal Oxide) | LPTS | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 650 V | 24A (Tc) | 10V | 185mOhm @ 11.3A, 10V | 4V @ 750µA | 70 nC @ 10 V | ±20V | 1650 pF @ 25 V | - | 245W (Tc) | |||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division BZD27B3V9P-HM3-08 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101, BZD27B-M | Tape & Reel (TR) | Active | ±2% | 175°C (TJ) | Surface Mount | DO-219AB | BZD27B3V9 | 800 mW | DO-219AB (SMF) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0050 | 3,000 | 1.2 V @ 200 mA | 50 µA @ 1 V | 3.9 V | 8 Ohms | |||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division V6KM120DU-M3/I | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | 8-PowerTDFN | V6KM120 | Schottky | FlatPAK 5x6 (Dual) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 6,000 | Fast Recovery =< 500ns, > 200mA (Io) | 2 Independent | 120 V | 3A | 820 mV @ 3 A | 300 µA @ 120 V | -40°C ~ 175°C | ||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division V10KM45DUHM3/H | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | 8-PowerTDFN | V10KM45 | Schottky | FlatPAK 5x6 (Dual) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 1,500 | Fast Recovery =< 500ns, > 200mA (Io) | 2 Independent | 45 V | 5A | 620 mV @ 5 A | 200 µA @ 45 V | -40°C ~ 175°C | ||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division V10KL45DUHM3/H | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | 8-PowerTDFN | V10KL45 | Schottky | FlatPAK 5x6 (Dual) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 1,500 | Fast Recovery =< 500ns, > 200mA (Io) | 2 Independent | 45 V | 5A | 560 mV @ 5 A | 650 µA @ 45 V | -40°C ~ 150°C | ||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division VS-12TTS08HM3 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101 | Tube | Active | -40°C ~ 125°C (TJ) | Through Hole | TO-220-3 | 12TTS08 | TO-220-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.30.0080 | 50 | 30 mA | 800 V | 12.5 A | 1 V | 110A @ 50Hz | 15 mA | 1.2 V | 8 A | 50 µA | Standard Recovery | |||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division VS-20ATS12HM3 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101 | Tube | Active | Through Hole | TO-220-3 | 20ATS12 | Standard | TO-220-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 50 | Standard Recovery >500ns, > 200mA (Io) | 1200 V | 1.1 V @ 20 A | 100 µA @ 1200 V | -40°C ~ 150°C | 20A | - | ||||||||||||||||||||||||||||||||
|
Vishay General Semiconductor - Diodes Division VS-20ETF06THM3 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101 | Tube | Active | Through Hole | TO-220-2 | 20ETF06 | Standard | TO-220AC | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 50 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | 1.3 V @ 20 A | 160 ns | 100 µA @ 600 V | -40°C ~ 150°C | 20A | - | ||||||||||||||||||||||||||||||
|
Vishay General Semiconductor - Diodes Division VS-30TPS16L-M3 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Active | -40°C ~ 125°C (TJ) | Through Hole | TO-247-3 | 30TPS16 | TO-247AD | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.30.0080 | 25 | 150 mA | 1.6 kV | 30 A | 2 V | 300A, 314A | 45 mA | 1.3 V | 20 A | 500 µA | Standard Recovery | ||||||||||||||||||||||||||||
|
Vishay General Semiconductor - Diodes Division VS-35EPF06L-M3 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Active | Through Hole | TO-247-2 | 35EPF06 | Standard | TO-247AD | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 25 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | 1.46 V @ 35 A | 160 ns | 100 µA @ 600 V | -40°C ~ 150°C | 35A | - | ||||||||||||||||||||||||||||||
|
Vishay General Semiconductor - Diodes Division VS-35EPF12L-M3 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Active | Through Hole | TO-247-2 | 35EPF12 | Standard | TO-247AD | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 25 | Fast Recovery =< 500ns, > 200mA (Io) | 1200 V | 1.47 V @ 35 A | 450 ns | 100 µA @ 1200 V | -40°C ~ 150°C | 35A | - | ||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division VS-45EPS12L-M3 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Active | Through Hole | TO-247-2 | 45EPS12 | Standard | TO-247AD | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 25 | Standard Recovery >500ns, > 200mA (Io) | 1200 V | 1.14 V @ 45 A | 100 µA @ 1200 V | -40°C ~ 150°C | 45A | - | ||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division VS-45EPS16L-M3 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Active | Through Hole | TO-247-2 | 45EPS16 | Standard | TO-247AD | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 25 | Standard Recovery >500ns, > 200mA (Io) | 1600 V | 1.16 V @ 45 A | 100 µA @ 1600 V | -40°C ~ 150°C | 45A | - | ||||||||||||||||||||||||||||||||
|
Vishay General Semiconductor - Diodes Division VS-40TPS12L-M3 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Active | -40°C ~ 125°C (TJ) | Through Hole | TO-247-3 | 40TPS12 | TO-247AD | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.30.0080 | 25 | 300 mA | 1.2 kV | 55 A | 1.7 V | 600A @ 50Hz | 150 mA | 1.85 V | 35 A | 500 µA | Standard Recovery | ||||||||||||||||||||||||||||
|
Vishay General Semiconductor - Diodes Division VS-65EPF12L-M3 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Active | Through Hole | TO-247-2 | 65EPF12 | Standard | TO-247AD | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 25 | Fast Recovery =< 500ns, > 200mA (Io) | 1200 V | 1.42 V @ 65 A | 480 ns | 100 µA @ 1200 V | -40°C ~ 150°C | 65A | - | ||||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division VS-90EPF06L-M3 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Active | Through Hole | TO-247-2 | 90EPF06 | Standard | TO-247AD | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 25 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | 1.3 V @ 90 A | 190 ns | 100 µA @ 600 V | -40°C ~ 150°C | 90A | - | ||||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division V10PM6HM3/I | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101, eSMP®, TMBS® | Tape & Reel (TR) | Active | Surface Mount | TO-277, 3-PowerDFN | V10PM6 | Schottky | TO-277A (SMPC) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 6,500 | Fast Recovery =< 500ns, > 200mA (Io) | 60 V | 640 mV @ 10 A | 800 µA @ 60 V | -40°C ~ 175°C | 10A | 1650pF @ 4V, 1MHz | |||||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division V8PM15-M3/I | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | eSMP®, TMBS® | Tape & Reel (TR) | Active | Surface Mount | TO-277, 3-PowerDFN | V8PM15 | Schottky | TO-277A (SMPC) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 6,500 | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | 1.08 V @ 8 A | 150 µA @ 150 V | -40°C ~ 175°C | 8A | 460pF @ 4V, 1MHz | |||||||||||||||||||||||||||||||
|
Vishay General Semiconductor - Diodes Division V10PM15HM3/I | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101, eSMP®, TMBS® | Tape & Reel (TR) | Active | Surface Mount | TO-277, 3-PowerDFN | V10PM15 | Schottky | TO-277A (SMPC) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 6,500 | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | 1.08 V @ 10 A | 200 µA @ 150 V | -40°C ~ 175°C | 10A | 680pF @ 4V, 1MHz | |||||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division V30K45HM3/I | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101, eSMP®, TMBS® | Tape & Reel (TR) | Active | Surface Mount | 8-PowerTDFN | V30K45 | Schottky | FlatPAK (5x6) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 6,000 | Fast Recovery =< 500ns, > 200mA (Io) | 45 V | 630 mV @ 30 A | 2 mA @ 45 V | -40°C ~ 150°C | 30A | 4000pF @ 4V, 1MHz | |||||||||||||||||||||||||||||||
| Rohm Semiconductor R6015FNX | Rohm Semiconductor |
Min: 1 Mult: 1 |
/image/Rohm Semiconductor | - | Bulk | Not For New Designs | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | R6015 | MOSFET (Metal Oxide) | TO-220FM | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 846-R6015FNX | EAR99 | 8541.29.0095 | 500 | N-Channel | 600 V | 15A (Ta) | 10V | 350mOhm @ 7.5A, 10V | 5V @ 1mA | 42 nC @ 10 V | ±30V | 1660 pF @ 25 V | - | 50W (Tc) | ||||||||||||||||||||||||||
| Infineon Technologies IPW90R120C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | CoolMOS™ | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | IPW90R120 | MOSFET (Metal Oxide) | PG-TO247-3-21 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 900 V | 36A (Tc) | 10V | 120mOhm @ 26A, 10V | 3.5V @ 2.9mA | 270 nC @ 10 V | ±20V | 6800 pF @ 100 V | - | 417W (Tc) | |||||||||||||||||||||||||||
| onsemi FCA36N60NF | onsemi |
Min: 1 Mult: 1 |
/image/onsemi | FRFET®, SupreMOS® | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | FCA36N60 | MOSFET (Metal Oxide) | TO-3PN | download | ROHS3 Compliant | Not Applicable | REACH Unaffected | 488-FCA36N60NF | EAR99 | 8541.29.0095 | 450 | N-Channel | 600 V | 34.9A (Tc) | 10V | 95mOhm @ 18A, 10V | 5V @ 250µA | 112 nC @ 10 V | ±30V | 4245 pF @ 100 V | - | 312W (Tc) |
