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Discrete Semiconductor Products(28073)
| Image | Name | Manufacturer | Quantity | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Test Condition | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Diode Type | Voltage - Peak Reverse (Max) | Transistor Type | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Noise Figure (dB Typ @ f) | Capacitance Ratio | Capacitance Ratio Condition | Q @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STMicroelectronics STPS20120CT | STMicroelectronics |
Min: 1 Mult: 1 |
/image/STMicroelectronics | - | Tube | Active | Through Hole | TO-220-3 | STPS20120 | Schottky | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 50 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 120 V | 10A | 920 mV @ 10 A | 10 µA @ 120 V | 175°C (Max) | |||||||||||||||||||||||||||||||||||||||
 |
Vishay General Semiconductor - Diodes Division 201CMQ045PBF | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Obsolete | Chassis Mount | TO-244AB | 201CMQ | Schottky | TO-244AB | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | *201CMQ045PBF | EAR99 | 8541.10.0080 | 50 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 45 V | 100A | 670 mV @ 100 A | 10 mA @ 45 V | -55°C ~ 175°C | |||||||||||||||||||||||||||||||||||||
| onsemi MBR160RLG | onsemi |
Min: 1 Mult: 1 |
/image/onsemi | - | Tape & Reel (TR) | Active | Through Hole | DO-204AL, DO-41, Axial | MBR160 | Schottky | Axial | download | ROHS3 Compliant | Not Applicable | REACH Unaffected | EAR99 | 8541.10.0080 | 5,000 | Fast Recovery =< 500ns, > 200mA (Io) | 60 V | 750 mV @ 1 A | 500 µA @ 60 V | -65°C ~ 150°C | 1A | - | |||||||||||||||||||||||||||||||||||||||
| NXP USA Inc. BB182,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
/image/NXP USA Inc. | - | Tape & Reel (TR) | Obsolete | -55°C ~ 125°C (TJ) | Surface Mount | SC-79, SOD-523 | BB18 | SOD-523 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0070 | 3,000 | 2.89pF @ 28V, 1MHz | Single | 32 V | 22 | C1/C28 | - | ||||||||||||||||||||||||||||||||||||||||
| NXP USA Inc. BFG540/X,215 | NXP USA Inc. |
Min: 1 Mult: 1 |
/image/NXP USA Inc. | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-253-4, TO-253AA | BFG54 | 400mW | SOT-143B | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0075 | 3,000 | - | 15V | 120mA | NPN | 60 @ 40mA, 8V | 9GHz | 1.3dB ~ 2.4dB @ 900MHz | ||||||||||||||||||||||||||||||||||||||
| Infineon Technologies IRLR3105PBF | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | HEXFET® | Tube | Discontinued at Digi-Key | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | D-Pak | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 75 | N-Channel | 55 V | 25A (Tc) | 5V, 10V | 37mOhm @ 15A, 10V | 3V @ 250µA | 20 nC @ 5 V | ±16V | 710 pF @ 25 V | - | 57W (Tc) | |||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division VS-8ETH06FPPBF | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | FRED Pt® | Tube | Obsolete | Through Hole | TO-220-2 Full Pack | 8ETH06 | Standard | TO-220-2 Full Pack | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 50 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | 2.4 V @ 8 A | 25 ns | 50 µA @ 600 V | -65°C ~ 175°C | 8A | - | ||||||||||||||||||||||||||||||||||||||
| Vishay Siliconix IRFU430APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IRFU430 | MOSFET (Metal Oxide) | TO-251AA | download | ROHS3 Compliant | 1 (Unlimited) | *IRFU430APBF | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 500 V | 5A (Tc) | 10V | 1.7Ohm @ 3A, 10V | 4.5V @ 250µA | 24 nC @ 10 V | ±30V | 490 pF @ 25 V | - | 110W (Tc) | ||||||||||||||||||||||||||||||||||
| Infineon Technologies IRFU48ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | HEXFET® | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | IPAK (TO-251AA) | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 75 | N-Channel | 55 V | 42A (Tc) | 10V | 11mOhm @ 37A, 10V | 4V @ 50µA | 60 nC @ 10 V | ±20V | 1720 pF @ 25 V | - | 91W (Tc) | ||||||||||||||||||||||||||||||||||||
| Infineon Technologies IRL7833PBF | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | HEXFET® | Tube | Not For New Designs | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | IRL7833 | MOSFET (Metal Oxide) | TO-220AB | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 100 | N-Channel | 30 V | 150A (Tc) | 4.5V, 10V | 3.8mOhm @ 38A, 10V | 2.3V @ 250µA | 47 nC @ 4.5 V | ±20V | 4170 pF @ 15 V | - | 140W (Tc) | ||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division VS-30ETH06-1PBF | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | FRED Pt® | Tube | Discontinued at Digi-Key | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | 30ETH06 | Standard | TO-262-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 50 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | 2.6 V @ 30 A | 35 ns | 50 µA @ 600 V | 30A | - | |||||||||||||||||||||||||||||||||||||||
| Infineon Technologies IRF2805PBF | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | HEXFET® | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | IRF2805 | MOSFET (Metal Oxide) | TO-220AB | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 55 V | 75A (Tc) | 10V | 4.7mOhm @ 104A, 10V | 4V @ 250µA | 230 nC @ 10 V | ±20V | 5110 pF @ 25 V | - | 330W (Tc) | ||||||||||||||||||||||||||||||||||
| Vishay Siliconix IRFP15N60LPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | IRFP15 | MOSFET (Metal Oxide) | TO-247AC | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | *IRFP15N60LPBF | EAR99 | 8541.29.0095 | 25 | N-Channel | 600 V | 15A (Tc) | 10V | 460mOhm @ 9A, 10V | 5V @ 250µA | 100 nC @ 10 V | ±30V | 2720 pF @ 25 V | - | 280W (Tc) | |||||||||||||||||||||||||||||||||
| Vishay Siliconix IRFP27N60KPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | IRFP27 | MOSFET (Metal Oxide) | TO-247AC | download | ROHS3 Compliant | 1 (Unlimited) | *IRFP27N60KPBF | EAR99 | 8541.29.0095 | 25 | N-Channel | 600 V | 27A (Tc) | 10V | 220mOhm @ 16A, 10V | 5V @ 250µA | 180 nC @ 10 V | ±30V | 4660 pF @ 25 V | - | 500W (Tc) | ||||||||||||||||||||||||||||||||||
| Infineon Technologies IRG4PC60FPBF | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | IRG4PC60 | Standard | 520 W | TO-247AC | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 400 | 480V, 60A, 5Ohm, 15V | - | 600 V | 90 A | 360 A | 1.8V @ 15V, 60A | 300µJ (on), 4.6mJ (off) | 290 nC | 42ns/310ns | |||||||||||||||||||||||||||||||||||
| Vishay Siliconix IRFU020PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IRFU | MOSFET (Metal Oxide) | TO-251AA | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | *IRFU020PBF | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 60 V | 14A (Tc) | 10V | 100mOhm @ 8.4A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±20V | 640 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | |||||||||||||||||||||||||||||||||
| Infineon Technologies IRFU3706PBF | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | HEXFET® | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | IPAK (TO-251AA) | download | 1 (Unlimited) | REACH Unaffected | *IRFU3706PBF | EAR99 | 8541.29.0095 | 75 | N-Channel | 20 V | 75A (Tc) | 2.8V, 10V | 9mOhm @ 15A, 10V | 2V @ 250µA | 35 nC @ 4.5 V | ±12V | 2410 pF @ 10 V | - | 88W (Tc) | |||||||||||||||||||||||||||||||||||
| Infineon Technologies IRLR4343PBF | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | HEXFET® | Tube | Obsolete | -40°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | D-Pak | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 75 | N-Channel | 55 V | 26A (Tc) | 4.5V, 10V | 50mOhm @ 4.7A, 10V | 1V @ 250µA | 42 nC @ 10 V | ±20V | 740 pF @ 50 V | - | 79W (Tc) | ||||||||||||||||||||||||||||||||||||
| Vishay Siliconix IRFD110PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | IRFD110 | MOSFET (Metal Oxide) | 4-HVMDIP | download | ROHS3 Compliant | 1 (Unlimited) | *IRFD110PBF | EAR99 | 8541.29.0095 | 100 | N-Channel | 100 V | 1A (Ta) | 10V | 540mOhm @ 600mA, 10V | 4V @ 250µA | 8.3 nC @ 10 V | ±20V | 180 pF @ 25 V | - | 1.3W (Ta) | ||||||||||||||||||||||||||||||||||
| Vishay Siliconix IRFD9010PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | IRFD9010 | MOSFET (Metal Oxide) | 4-HVMDIP | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 100 | P-Channel | 50 V | 1.1A (Tc) | 10V | 500mOhm @ 580mA, 10V | 4V @ 250µA | 11 nC @ 10 V | ±20V | 240 pF @ 25 V | - | 1W (Tc) | |||||||||||||||||||||||||||||||||||
| Vishay Siliconix IRFD9120PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | IRFD9120 | MOSFET (Metal Oxide) | 4-HVMDIP | download | ROHS3 Compliant | 1 (Unlimited) | *IRFD9120PBF | EAR99 | 8541.29.0095 | 100 | P-Channel | 100 V | 1A (Ta) | 10V | 600mOhm @ 600mA, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 390 pF @ 25 V | - | 1.3W (Ta) | ||||||||||||||||||||||||||||||||||
| Vishay Siliconix IRFD9210PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | IRFD9210 | MOSFET (Metal Oxide) | 4-HVMDIP | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | P-Channel | 200 V | 400mA (Ta) | 10V | 3Ohm @ 240mA, 10V | 4V @ 250µA | 8.9 nC @ 10 V | ±20V | 170 pF @ 25 V | - | 1W (Ta) | |||||||||||||||||||||||||||||||||||
| Vishay Siliconix IRLD110PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | IRLD110 | MOSFET (Metal Oxide) | 4-HVMDIP | download | ROHS3 Compliant | 1 (Unlimited) | *IRLD110PBF | EAR99 | 8541.29.0095 | 100 | N-Channel | 100 V | 1A (Ta) | 4V, 5V | 540mOhm @ 600mA, 5V | 2V @ 250µA | 6.1 nC @ 5 V | ±10V | 250 pF @ 25 V | - | 1.3W (Ta) | ||||||||||||||||||||||||||||||||||
| Vishay Siliconix IRLD024PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | IRLD024 | MOSFET (Metal Oxide) | 4-HVMDIP | download | ROHS3 Compliant | 1 (Unlimited) | *IRLD024PBF | EAR99 | 8541.29.0095 | 100 | N-Channel | 60 V | 2.5A (Ta) | 4V, 5V | 100mOhm @ 1.5A, 5V | 2V @ 250µA | 18 nC @ 5 V | ±10V | 870 pF @ 25 V | - | 1.3W (Ta) | ||||||||||||||||||||||||||||||||||
| Infineon Technologies IRF9910TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | HEXFET® | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | IRF99 | MOSFET (Metal Oxide) | 2W | 8-SO | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 4,000 | 2 N-Channel (Dual) | 20V | 10A, 12A | 9.3mOhm @ 12A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 900pF @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division VS-80CNQ045APBF | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Bulk | Obsolete | Chassis Mount | D-61-8 | 80CNQ045 | Schottky | D-61-8 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 200 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 45 V | 40A | 520 mV @ 40 A | 5 mA @ 45 V | -55°C ~ 150°C | |||||||||||||||||||||||||||||||||||||||
| Vishay General Semiconductor - Diodes Division VS-16CTU04PBF | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | - | Tube | Discontinued at Digi-Key | Through Hole | TO-220-3 | 16CTU04 | Standard | TO-220-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 50 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 400 V | 8A | 1.3 V @ 8 A | 60 ns | 10 µA @ 400 V | -65°C ~ 175°C | ||||||||||||||||||||||||||||||||||||||
| Infineon Technologies IRF3711ZCLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | HEXFET® | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | TO-262 | download | 1 (Unlimited) | REACH Unaffected | *IRF3711ZCLPBF | EAR99 | 8541.29.0095 | 50 | N-Channel | 20 V | 92A (Tc) | 4.5V, 10V | 6mOhm @ 15A, 10V | 2.45V @ 250µA | 24 nC @ 4.5 V | ±20V | 2150 pF @ 10 V | - | 79W (Tc) | |||||||||||||||||||||||||||||||||||
| Infineon Technologies IRFZ44ZLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | HEXFET® | Tube | Not For New Designs | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | IRFZ44 | MOSFET (Metal Oxide) | TO-262 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 55 V | 51A (Tc) | 10V | 13.9mOhm @ 31A, 10V | 4V @ 250µA | 43 nC @ 10 V | ±20V | 1420 pF @ 25 V | - | 80W (Tc) | ||||||||||||||||||||||||||||||||||
| Vishay Siliconix IRF720LPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | IRF720 | MOSFET (Metal Oxide) | TO-262-3 | download | ROHS3 Compliant | 1 (Unlimited) | *IRF720LPBF | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 400 V | 3.3A (Tc) | 10V | 1.8Ohm @ 2A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | 410 pF @ 25 V | - | 3.1W (Ta), 50W (Tc) |
