Image | Name | Manufacturer | Quantity | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Input | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Vce(on) (Max) @ Vge, Ic | Current - Collector Cutoff (Max) | NTC Thermistor | Input Capacitance (Cies) @ Vce | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition |
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Vishay Siliconix SQJ486EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | Automotive, AEC-Q101, TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | SQJ486 | MOSFET (Metal Oxide) | PowerPAK® SO-8 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 75 V | 30A (Tc) | 4.5V, 10V | 26mOhm @ 51A, 10V | 2.1V @ 250µA | 34 nC @ 10 V | ±20V | 1386 pF @ 15 V | - | 56W (Tc) | ||||||||||||||||||||||||||
Vishay Siliconix SIHP12N50C-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
/image/Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | SIHP12 | MOSFET (Metal Oxide) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 500 V | 12A (Tc) | 10V | 555mOhm @ 4A, 10V | 5V @ 250µA | 48 nC @ 10 V | ±30V | 1375 pF @ 25 V | - | 208W (Tc) | |||||||||||||||||||||||||||
Infineon Technologies IPW60R017C7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | CoolMOS™ | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | IPW60R017 | MOSFET (Metal Oxide) | PG-TO247-3-41 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 600 V | 109A (Tc) | 10V | 17mOhm @ 58.2A, 10V | 4V @ 2.91mA | 240 nC @ 10 V | ±20V | 9890 pF @ 400 V | - | 446W (Tc) | |||||||||||||||||||||||||
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Infineon Technologies SPP11N60S5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | CoolMOS™ | Tube | Last Time Buy | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | SPP11N60 | MOSFET (Metal Oxide) | PG-TO220-3-1 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 500 | N-Channel | 600 V | 11A (Tc) | 10V | 380mOhm @ 7A, 10V | 5.5V @ 500µA | 54 nC @ 10 V | ±20V | 1460 pF @ 25 V | - | 125W (Tc) | ||||||||||||||||||||||||
Infineon Technologies SPS02N60C3BKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | CoolMOS™ | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | SPS02N | MOSFET (Metal Oxide) | PG-TO251-3-11 | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,500 | N-Channel | 600 V | 1.8A (Tc) | 10V | 3Ohm @ 1.1A, 10V | 3.9V @ 80µA | 12.5 nC @ 10 V | ±20V | 200 pF @ 25 V | - | 25W (Tc) | ||||||||||||||||||||||||||
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Infineon Technologies IPD80N04S306BATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | * | Tape & Reel (TR) | Not For New Designs | IPD80N04 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 0000.00.0000 | 2,500 | |||||||||||||||||||||||||||||||||||||||||
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Infineon Technologies IPC218N06N3X7SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | OptiMOS™ 3 | Bulk | Active | - | Surface Mount | Die | IPC218 | MOSFET (Metal Oxide) | Die | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | N-Channel | 60 V | - | 10V | 100mOhm @ 2A, 10V | 4V @ 196µA | - | - | - | ||||||||||||||||||||||||||
Infineon Technologies IPI076N15N5AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | OptiMOS™ | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | IPI076 | MOSFET (Metal Oxide) | PG-TO262-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 150 V | 112A (Tc) | 8V, 10V | 7.6mOhm @ 56A, 10V | 4.6V @ 160µA | 61 nC @ 10 V | ±20V | 4700 pF @ 75 V | - | 214W (Tc) | |||||||||||||||||||||||||
Infineon Technologies BSD340NH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | Automotive, AEC-Q101, OptiMOS™ | Tape & Reel (TR) | Obsolete | Surface Mount | 6-VSSOP, SC-88, SOT-363 | BSD340 | - | PG-SOT363-6 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | SP000951224 | EAR99 | 8541.29.0095 | 3,000 | - | |||||||||||||||||||||||||||||||||||
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Infineon Technologies FZ3600R17KE3B2NOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | IHM-B | Tray | Obsolete | -40°C ~ 125°C (TJ) | Chassis Mount | Module | Standard | - | download | 1 (Unlimited) | REACH Unaffected | SP000091889 | EAR99 | 8541.29.0095 | 1 | Single Switch | - | 1700 V | 4800 A | - | 5 mA | No | 54 nF @ 25 V | ||||||||||||||||||||||||||||
Texas Instruments CSD18543Q3AT | Texas Instruments |
Min: 1 Mult: 1 |
/image/Texas Instruments | NexFET™ | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | CSD18543 | MOSFET (Metal Oxide) | 8-VSONP (3x3.15) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 250 | N-Channel | 60 V | 12A (Ta), 60A (Tc) | 4.5V, 10V | 15.6mOhm @ 12A, 4.5V | 2.7V @ 250µA | 14.5 nC @ 10 V | ±20V | 1150 pF @ 30 V | Standard | 66W (Tc) | |||||||||||||||||||||||||
Toshiba Semiconductor and Storage 2SA1020A,NSEIKIF(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
/image/Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA1020 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | PNP | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | |||||||||||||||||||||||||||||||
Toshiba Semiconductor and Storage 2SA1020-Y(HIT,F,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
/image/Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA1020 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | PNP | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | |||||||||||||||||||||||||||||||
Toshiba Semiconductor and Storage 2SA1020-Y(ND1,AF) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
/image/Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA1020 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | PNP | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | |||||||||||||||||||||||||||||||
Toshiba Semiconductor and Storage 2SA1680(T6DNSO,F,M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
/image/Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA1680 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | PNP | 500mV @ 50mA, 1A | 120 @ 100mA, 2V | 100MHz | |||||||||||||||||||||||||||||||
Toshiba Semiconductor and Storage 2SA949-Y(JVC1,F,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
/image/Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA949 | 800 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 150 V | 50 mA | 100nA (ICBO) | PNP | 800mV @ 1mA, 10A | 70 @ 10mA, 5V | 120MHz | |||||||||||||||||||||||||||||||
Toshiba Semiconductor and Storage 2SB1457(T6CANO,F,M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
/image/Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SB1457 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 1 | 100 V | 2 A | 10µA (ICBO) | PNP | 1.5V @ 1mA, 1A | 2000 @ 1A, 2V | 50MHz | |||||||||||||||||||||||||||||||
Toshiba Semiconductor and Storage 2SC4793,F(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
/image/Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SC4793 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 230 V | 1 A | 1µA (ICBO) | NPN | 1.5V @ 50mA, 500mA | 100 @ 100mA, 5V | 100MHz | |||||||||||||||||||||||||||||||
Toshiba Semiconductor and Storage 2SK3670(T6CANO,F,M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
/image/Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Through Hole | TO-226-3, TO-92-3 Long Body | 2SK3670 | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 1 | 670mA (Tj) | |||||||||||||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division MBR10H50HE3/45 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101 | Tube | Obsolete | Through Hole | TO-220-2 | MBR10 | Standard | TO-220AC | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 50 | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | 710 mV @ 10 A | 100 µA @ 50 V | -65°C ~ 175°C | 10A | - | |||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division MBR15H35CTHE3/45 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101 | Tube | Obsolete | Through Hole | TO-220-3 | MBR15 | Schottky | TO-220AB | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 50 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 35 V | 7.5A | 630 mV @ 7.5 A | 50 µA @ 35 V | -65°C ~ 175°C | |||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division MBR2550CTHE3/45 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101 | Tube | Obsolete | Through Hole | TO-220-3 | MBR2550 | Schottky | TO-220AB | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 50 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 50 V | 12.5A | 750 mV @ 15 A | 1 mA @ 50 V | -65°C ~ 150°C | |||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division MBR7H50-E3/45 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101 | Tube | Obsolete | Through Hole | TO-220-2 | MBR7 | Schottky | TO-220AC | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 50 | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | 730 mV @ 7.5 A | 50 µA @ 50 V | -65°C ~ 175°C | 7.5A | - | |||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division MBRB10H50-E3/45 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101 | Tube | Obsolete | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MBRB10 | Schottky | TO-263AB | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 50 | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | 710 mV @ 10 A | 100 µA @ 50 V | -65°C ~ 175°C | 10A | - | |||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division MBRB16H50-E3/45 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101 | Tube | Obsolete | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MBRB16 | Schottky | TO-263AB | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 50 | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | 730 mV @ 16 A | 100 µA @ 50 V | -65°C ~ 175°C | 16A | - | |||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division MBRB20H50CT-E3/45 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101 | Tube | Obsolete | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MBRB20 | Schottky | TO-263AB | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 50 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 50 V | 10A | 710 mV @ 10 A | 100 µA @ 50 V | -65°C ~ 175°C | |||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division MBRB20H60CT-E3/45 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101 | Tube | Obsolete | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MBRB20 | Schottky | TO-263AB (D²PAK) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 50 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 60 V | 10A | 710 mV @ 10 A | 100 µA @ 60 V | -65°C ~ 175°C | |||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division MBRB25H50CT-E3/45 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101 | Tube | Obsolete | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MBRB25 | Schottky | TO-263AB | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 50 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 50 V | 15A | 640 mV @ 15 A | 100 µA @ 50 V | -65°C ~ 175°C | |||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division MBRB7H45-E3/45 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101 | Tube | Obsolete | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MBRB7 | Schottky | TO-263AB | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 50 | Fast Recovery =< 500ns, > 200mA (Io) | 45 V | 630 mV @ 7.5 A | 50 µA @ 45 V | -65°C ~ 175°C | 7.5A | - | |||||||||||||||||||||||||||||
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Vishay General Semiconductor - Diodes Division MBRF10H35HE3/45 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
/image/Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101 | Tube | Obsolete | Through Hole | TO-220-2 Full Pack, Isolated Tab | MBRF10 | Schottky | ITO-220AC | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 50 | Fast Recovery =< 500ns, > 200mA (Io) | 35 V | 630 mV @ 10 A | 100 µA @ 35 V | -65°C ~ 175°C | 10A | - |
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