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Switches
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Memory(65687)
| Image | Name | Manufacturer | Quantity | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Voltage - Supply | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | ECCN | HTSUS | Standard Package | Clock Frequency | Memory Type | Memory Size | Access Time | Memory Format | Memory Organization | Memory Interface | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Micron Technology Inc. FC8GAMALNA-AAT ES | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | e•MMC™ | Tray | Obsolete | -40°C ~ 105°C (TA) | Surface Mount | 100-TBGA | MTFC8 | FLASH - NAND | - | 100-TBGA (14x18) | 1 (Unlimited) | 3A991B1A | 8542.32.0071 | 980 | Non-Volatile | 64Gbit | FLASH | 8G x 8 | MMC | - | ||||||
 |
Micron Technology Inc. ECB130ABDCN-Y3 | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Obsolete | 1 (Unlimited) | EAR99 | 8542.32.0032 | 1 | ||||||||||||||||||
|
Micron Technology Inc. ECF620AAACN-C1-Y3-ES | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Active | ECF620 | 3 (168 Hours) | REACH Unaffected | 0000.00.0000 | 1 | |||||||||||||||||
|
Micron Technology Inc. ECF620AAACN-C2-Y3 | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Active | ECF620 | 3 (168 Hours) | REACH Unaffected | 0000.00.0000 | 1 | |||||||||||||||||
|
Micron Technology Inc. ECF620AAACN-C2-Y3-ES | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Active | ECF620 | 3 (168 Hours) | REACH Unaffected | 0000.00.0000 | 1 | |||||||||||||||||
|
Micron Technology Inc. EDF8164A3MD-GD-F-R | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Obsolete | -30°C ~ 85°C (TC) | - | - | EDF8164 | SDRAM - Mobile LPDDR3 | 1.14V ~ 1.95V | - | 1 (Unlimited) | EAR99 | 8542.32.0036 | 1 | 800 MHz | Volatile | 8Gbit | DRAM | 128M x 64 | Parallel | - | ||||
|
Micron Technology Inc. M29F400FB5AM6T2 | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Bulk | Obsolete | -40°C ~ 85°C (TA) | Surface Mount | 44-SOIC (0.496", 12.60mm Width) | M29F400 | FLASH - NOR | 4.5V ~ 5.5V | 44-SO | download | EAR99 | 8542.32.0071 | 1 | Non-Volatile | 4Mbit | 55 ns | FLASH | 512K x 8, 256K x 16 | Parallel | 55ns | ||||
|
Micron Technology Inc. 29F128G08CBCEBL05B3WC1ES | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Active | 0°C ~ 70°C (TA) | Surface Mount | Die | MT29F128G08 | FLASH - NAND | 2.7V ~ 3.6V | Die | 3 (168 Hours) | REACH Unaffected | 0000.00.0000 | 1 | Non-Volatile | 128Gbit | FLASH | 16G x 8 | Parallel | - | |||||
|
Micron Technology Inc. 29F128G08CBEBBL85C3WC1-R | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Obsolete | 0°C ~ 70°C (TA) | Surface Mount | Die | MT29F128G08 | FLASH - NAND | 2.7V ~ 3.6V | Die | 3A991B1A | 8542.32.0071 | 1 | Non-Volatile | 128Gbit | FLASH | 16G x 8 | Parallel | - | ||||||
|
Micron Technology Inc. 29F128G08EBCDBB05A3WC1 | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Active | 0°C ~ 70°C (TA) | Surface Mount | Die | MT29F128G08 | FLASH - NAND | 2.7V ~ 3.6V | Die | 3 (168 Hours) | REACH Unaffected | 0000.00.0000 | 1 | Non-Volatile | 128Gbit | FLASH | 16G x 8 | Parallel | - | |||||
|
Micron Technology Inc. 29F256G08EBCAGB16A3WC1-M | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Active | 0°C ~ 70°C (TA) | Surface Mount | Die | MT29F256G08 | FLASH - NAND (TLC) | 2.7V ~ 3.6V | Die | 3 (168 Hours) | REACH Unaffected | 0000.00.0000 | 1 | 333 MHz | Non-Volatile | 256Gbit | FLASH | 32G x 8 | Parallel | - | ||||
|
Micron Technology Inc. 29F256G08EBCAGB16A3WC1-R | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Obsolete | 0°C ~ 70°C (TA) | Surface Mount | Die | MT29F256G08 | FLASH - NAND (TLC) | 2.7V ~ 3.6V | Die | ROHS3 Compliant | 3 (168 Hours) | 3A991B1A | 8542.32.0071 | 1 | 333 MHz | Non-Volatile | 256Gbit | FLASH | 32G x 8 | Parallel | - | |||
|
Micron Technology Inc. 29F256G08EBHAFB16A3WC1 | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Obsolete | 0°C ~ 70°C (TA) | Surface Mount | Die | MT29F256G08 | FLASH - NAND (TLC) | 2.5V ~ 3.6V | Die | 1 (Unlimited) | OBSOLETE | 0000.00.0000 | 1 | 333 MHz | Non-Volatile | 256Gbit | FLASH | 32G x 8 | Parallel | - | ||||
|
Micron Technology Inc. 29F256G08EBHAFB16A3WTA | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Active | 0°C ~ 70°C (TA) | Surface Mount | Die | MT29F256G08 | FLASH - NAND (TLC) | 2.5V ~ 3.6V | Die | 3 (168 Hours) | REACH Unaffected | 0000.00.0000 | 1 | 333 MHz | Non-Volatile | 256Gbit | FLASH | 32G x 8 | Parallel | - | ||||
|
Micron Technology Inc. 29F2G01ABAGDM79A3WC1 | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Obsolete | -40°C ~ 105°C (TC) | Surface Mount | Die | MT29F2G01 | FLASH - NAND | 2.7V ~ 3.6V | Die | OBSOLETE | 1 | Non-Volatile | 2Gbit | FLASH | 2G x 1 | SPI | - | |||||||
|
Micron Technology Inc. 29F4G08ABAEAM70M3WC1 | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Obsolete | 0°C ~ 70°C (TA) | Surface Mount | Die | MT29F4G08 | FLASH - NAND | 2.7V ~ 3.6V | Die | OBSOLETE | 1 | Non-Volatile | 4Gbit | FLASH | 512M x 8 | Parallel | - | |||||||
|
Micron Technology Inc. 29F64G08ABEBBM84C3WC1 | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Obsolete | 0°C ~ 70°C (TA) | Surface Mount | Die | MT29F64G08 | FLASH - NAND | 2.7V ~ 3.6V | Die | OBSOLETE | 0000.00.0000 | 1 | Non-Volatile | 64Gbit | FLASH | 8G x 8 | Parallel | - | ||||||
|
Micron Technology Inc. 29F64G08CBCGBL04A3WC1-R | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Active | 0°C ~ 70°C (TA) | Surface Mount | Die | MT29F64G08 | FLASH - NAND | 2.7V ~ 3.6V | Die | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 3A991B1A | 8542.32.0071 | 1 | Non-Volatile | 64Gbit | FLASH | 8G x 8 | Parallel | - | |||
|
Micron Technology Inc. 40A1G8Z01AWC1 | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Obsolete | - | Surface Mount | Die | MT40A1G8 | SDRAM - DDR4 | 1.14V ~ 1.26V | Wafer | OBSOLETE | 1 | Volatile | 8Gbit | DRAM | 1G x 8 | Parallel | - | |||||||
|
Micron Technology Inc. 40A512M16Z01AWC1 | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Obsolete | - | Surface Mount | Die | MT40A512M16 | SDRAM - DDR4 | 1.14V ~ 1.26V | Wafer | OBSOLETE | 1 | Volatile | 8Gbit | DRAM | 512M x 16 | Parallel | - | |||||||
|
Micron Technology Inc. 41K256M16V00HWC1-N001 | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Active | 0°C ~ 95°C (TC) | MT41K256M16 | SDRAM - DDR3L | 1.283V ~ 1.45V | 3 (168 Hours) | REACH Unaffected | 0000.00.0000 | 1 | Volatile | 4Gbit | DRAM | 256M x 16 | Parallel | - | ||||||||
|
Micron Technology Inc. 46H32M32LFT68MWC2 | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Obsolete | - | MT46H32M32 | SDRAM - Mobile LPDDR | 1.7V ~ 1.95V | OBSOLETE | 0000.00.0000 | 1 | Volatile | 1Gbit | DRAM | 32M x 32 | Parallel | ||||||||||
|
Micron Technology Inc. 46H64M16LFT68MWC2 | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Obsolete | - | MT46H64M16 | SDRAM - Mobile LPDDR | 1.7V ~ 1.95V | REACH Unaffected | OBSOLETE | 0000.00.0000 | 1 | Volatile | 1Gbit | DRAM | 64M x 16 | Parallel | |||||||||
|
Micron Technology Inc. 47H64M16U88BWC1 | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Obsolete | - | MT47H64M16 | SDRAM - DDR2 | 1.7V ~ 1.9V | REACH Unaffected | EAR99 | 8542.32.0032 | 1 | Volatile | 1Gbit | DRAM | 64M x 16 | Parallel | |||||||||
|
Micron Technology Inc. 53B128M32D1Z00NEC2 | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Active | -30°C ~ 85°C (TC) | - | - | MT53B128 | SDRAM - Mobile LPDDR4 | 1.1V | - | 3 (168 Hours) | REACH Unaffected | 0000.00.0000 | 1 | Volatile | 4Gbit | DRAM | 128M x 32 | - | - | |||||
|
Micron Technology Inc. 53B192M32D1Z0AMWC1 | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Obsolete | 0°C ~ 85°C (TC) | - | - | MT53B192 | SDRAM - Mobile LPDDR4 | 1.1V | - | 1 (Unlimited) | EAR99 | 8542.32.0036 | 1 | Volatile | 6Gbit | DRAM | 192M x 32 | - | - | |||||
|
Micron Technology Inc. 53B256M16D1Z00MWC1 | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | * | Bulk | Active | MT53B256 | 3 (168 Hours) | REACH Unaffected | 0000.00.0000 | 1 | |||||||||||||||||
|
Micron Technology Inc. 53B512M16D1Z11MWC2 MS | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Discontinued at Digi-Key | MT53B512 | REACH Unaffected | 0000.00.0000 | 1 | ||||||||||||||||||
| Micron Technology Inc. 53B512M32D2DS-053 AAT:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 105°C (TC) | Surface Mount | 200-WFBGA | MT53B512 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | 3 (168 Hours) | REACH Unaffected | EAR99 | 8542.32.0036 | 1 | 1.866 GHz | Volatile | 16Gbit | DRAM | 512M x 32 | - | - | ||||
| Micron Technology Inc. 53D1024M32D4DT-046 AUT:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 125°C (TC) | Surface Mount | 200-VFBGA | MT53D1024 | SDRAM - Mobile LPDDR4 | 1.1V | 200-VFBGA (10x14.5) | 3 (168 Hours) | REACH Unaffected | EAR99 | 8542.32.0036 | 1 | 2.133 GHz | Volatile | 32Gbit | DRAM | 1G x 32 | - | - |
