Image | Name | Manufacturer | Quantity | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Technology | Voltage - Supply | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Clock Frequency | Memory Type | Memory Size | Access Time | Memory Format | Memory Organization | Memory Interface | Write Cycle Time - Word, Page |
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Micron Technology Inc. 53E1536M32D4DE-046 AAT:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 105°C (TC) | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4 | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | ROHS3 Compliant | 557-MT53E1536M32D4DE-046AAT:CTR | 2,000 | 2.133 GHz | Volatile | 48Gbit | 3.5 ns | DRAM | 1.5G x 32 | Parallel | 18ns | ||||||
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onsemi N24C32UDTG | onsemi |
Min: 1 Mult: 1 |
/image/onsemi | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 85°C (TA) | Surface Mount | 8-VFSOP (0.091", 2.30mm Width) | EEPROM | 1.7V ~ 5.5V | US8 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 488-N24C32UDTGTR | EAR99 | 8542.32.0051 | 3,000 | 1 MHz | Non-Volatile | 32Kbit | 400 ns | EEPROM | 4K x 8 | I²C | 4ms |
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Rohm Semiconductor BU34E02NUX-3TR | Rohm Semiconductor |
Min: 1 Mult: 1 |
/image/Rohm Semiconductor | - | Tape & Reel (TR) | Obsolete | ROHS3 Compliant | REACH Unaffected | 846-BU34E02NUX-3TR | 4,000 | ||||||||||||||||||
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Microchip Technology 24CS256T-E/Q4B | Microchip Technology |
Min: 1 Mult: 1 |
/image/Microchip Technology | - | Tape & Reel (TR) | Active | -40°C ~ 125°C (TA) | Surface Mount | 8-UFDFN Exposed Pad | EEPROM | 1.7V ~ 5.5V | 8-UDFN (2x3) | download | 150-24CS256T-E/Q4BTR | 5,000 | 1 MHz | Non-Volatile | 256Kbit | 400 ns | EEPROM | 32K x 8 | I²C | 5ms | |||||
Micron Technology Inc. 53E384M32D2FW-046 IT:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | -40°C ~ 95°C (TC) | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4 | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | 557-MT53E384M32D2FW-046IT:E | 1 | 2.133 GHz | Volatile | 12Gbit | 3.5 ns | DRAM | 384M x 32 | Parallel | 18ns | |||||||
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Micron Technology Inc. 62F1536M64D8EK-026 WT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -25°C ~ 85°C | Surface Mount | 441-TFBGA | SDRAM - Mobile LPDDR5 | - | 441-TFBGA (14x14) | 557-MT62F1536M64D8EK-026WT:BTR | 1,500 | 3.2 GHz | Volatile | 96Gbit | DRAM | 1.5G x 64 | - | - | |||||||
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Micron Technology Inc. 29F1T08GBLCEJ4:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT29F1T08GBLCEJ4:CTR | 2,000 | ||||||||||||||||||||
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Micron Technology Inc. 53D1536M32D4NQ-046 WT:A TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT53D1536M32D4NQ-046WT:ATR | 2,000 | ||||||||||||||||||||
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Micron Technology Inc. 62F2G32D4DS-023 WT:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -25°C ~ 85°C | Surface Mount | 200-WFBGA | SDRAM - Mobile LPDDR5 | 1.05V | 200-WFBGA (10x14.5) | 557-MT62F2G32D4DS-023WT:CTR | 2,000 | 2.133 GHz | Volatile | 64Gbit | DRAM | 2G x 32 | Parallel | - | |||||||
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Micron Technology Inc. 29F8T08GULCEM4-M:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MT29F8T08GULCEM4-M:C | 1 | ||||||||||||||||||||
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Micron Technology Inc. FC32GASAONS-AAT TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q104 | Tape & Reel (TR) | Active | -40°C ~ 105°C (TC) | Surface Mount | 153-TFBGA | FLASH - NAND (SLC) | 2.7V ~ 3.6V | 153-TFBGA (11.5x13) | 557-MTFC32GASAONS-AATTR | 2,000 | 52 MHz | Non-Volatile | 256Gbit | FLASH | 32G x 8 | UFS2.1 | - | |||||||
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Micron Technology Inc. FC256GASAONS-AIT | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q104 | Box | Active | -40°C ~ 95°C (TC) | Surface Mount | 153-TFBGA | FLASH - NAND (SLC) | 2.7V ~ 3.6V | 153-TFBGA (11.5x13) | 557-MTFC256GASAONS-AIT | 1 | 52 MHz | Non-Volatile | 2Tbit | FLASH | 256G x 8 | UFS2.1 | - | |||||||
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Micron Technology Inc. FC128GAZAOTD-AIT | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MTFC128GAZAOTD-AIT | 1 | ||||||||||||||||||||
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Micron Technology Inc. 62F2G64D8EK-023 FAAT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MT62F2G64D8EK-023FAAT:B | 1 | ||||||||||||||||||||
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Micron Technology Inc. 62F1G64D4EK-023 AIT:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT62F1G64D4EK-023AIT:CTR | 2,000 | ||||||||||||||||||||
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Micron Technology Inc. 62F1G16D1DS-023 IT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -40°C ~ 95°C | Surface Mount | 200-WFBGA | SDRAM - Mobile LPDDR5 | 1.05V | 200-WFBGA (10x14.5) | 557-MT62F1G16D1DS-023IT:BTR | 2,000 | 4.266 GHz | Volatile | 16Gbit | DRAM | 1G x 16 | Parallel | - | |||||||
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Micron Technology Inc. 62F4G32D8DV-023 AAT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | -40°C ~ 105°C | - | - | SDRAM - Mobile LPDDR5 | - | - | 557-MT62F4G32D8DV-023AAT:B | 1 | 4.266 GHz | Volatile | 128Gbit | DRAM | 4G x 32 | Parallel | - | |||||||
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Micron Technology Inc. 29F2G01ABAGD12-AUT:G TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT29F2G01ABAGD12-AUT:GTR | 2,500 | ||||||||||||||||||||
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Micron Technology Inc. 29GZ5A5BPGGA-046IT.87J TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -40°C ~ 85°C (TA) | Surface Mount | 149-WFBGA | FLASH - NAND (SLC), DRAM - LPDDR4 | 1.06V ~ 1.17V, 1.7V ~ 1.95V | 149-WFBGA (8x9.5) | 557-MT29GZ5A5BPGGA-046IT.87JTR | 2,000 | Non-Volatile, Volatile | 4Gbit | 25 ns | FLASH, RAM | 512M x 8 | ONFI | 30ns | |||||||
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Micron Technology Inc. 29F1G08ABAFAM78A3WC1L | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 0°C ~ 70°C | - | - | FLASH - NAND (SLC) | 2.7V ~ 3.6V | - | 557-MT29F1G08ABAFAM78A3WC1L | 1 | Non-Volatile | 1Gbit | FLASH | 128M x 8 | - | - | ||||||||
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Micron Technology Inc. FC16GAPALGT-S1 AAT TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | e•MMC™ | Tape & Reel (TR) | Active | -40°C ~ 105°C (TA) | - | - | FLASH - NAND (SLC) | 2.7V ~ 3.6V | - | 557-MTFC16GAPALGT-S1AATTR | 2,000 | 200 MHz | Non-Volatile | 128Gbit | FLASH | 16G x 8 | eMMC_5.1 | - | |||||||
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Micron Technology Inc. 60B2G8HB-52B IT:G | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MT60B2G8HB-52BIT:G | 1 | ||||||||||||||||||||
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Micron Technology Inc. 29F1T08EBLCHD4-QJ:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT29F1T08EBLCHD4-QJ:CTR | 2,000 | ||||||||||||||||||||
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Micron Technology Inc. 40A4G4JC-062E:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Obsolete | 0°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | SDRAM - DDR4 | 1.14V ~ 1.26V | 78-FBGA (9x11) | download | 557-MT40A4G4JC-062E:E | OBSOLETE | 1 | 1.6 GHz | Volatile | 16Gbit | 19 ns | DRAM | 4G x 4 | POD | 15ns | ||||
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Micron Technology Inc. 29F1T08EBLCHD4-T:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MT29F1T08EBLCHD4-T:C | 1 | ||||||||||||||||||||
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Micron Technology Inc. 60B1G16HC-48B IT:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | -40°C ~ 95°C (TC) | Surface Mount | 102-VFBGA | SDRAM - DDR5 | - | 102-VFBGA (9x14) | 557-MT60B1G16HC-48BIT:A | 1 | 2.4 GHz | Volatile | 16Gbit | 16 ns | DRAM | 1G x 16 | POD | - | ||||||
Micron Technology Inc. 53E384M32D2FW-046 IT:E TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -40°C ~ 95°C (TC) | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | 557-MT53E384M32D2FW-046IT:ETR | 2,000 | 2.133 GHz | Volatile | 12Gbit | 3.5 ns | DRAM | 384M x 32 | Parallel | 18ns | |||||||
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Micron Technology Inc. 29F256G08EBHCFB16E3WC1-F | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MT29F256G08EBHCFB16E3WC1-F | 1 | ||||||||||||||||||||
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Micron Technology Inc. 29F8T08ESLEEG4-QB:E TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT29F8T08ESLEEG4-QB:ETR | 1,500 | ||||||||||||||||||||
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Micron Technology Inc. FC256GAZAOTD-AAT TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MTFC256GAZAOTD-AATTR | 2,000 |
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