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Memory(66694)
| Image | Name | Manufacturer | Quantity | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Voltage - Supply | Supplier Device Package | DataSheet | Moisture Sensitivity Level (MSL) | Other Names | ECCN | Standard Package | Clock Frequency | Memory Type | Memory Size | Access Time | Memory Format | Memory Organization | Memory Interface | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
Micron Technology Inc. 29VZZZCDAFQKWL-046 W.G0L TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -25°C ~ 85°C | Surface Mount | 254-BGA | FLASH - NAND, DRAM - LPDDR4X | - | 254-MCP | 557-MT29VZZZCDAFQKWL-046W.G0LTR | 2,000 | 2.133 GHz | Non-Volatile, Volatile | 2Tbit (NAND), 64Gbit (LPDDR4X) | FLASH, RAM | 256G x 8 (NAND), 2G x 32 (LPDDR4X) | UFS2.1 | - | |||||
|
Micron Technology Inc. 53E768M64D4HJ-046 WT:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Obsolete | 557-MT53E768M64D4HJ-046WT:A | OBSOLETE | 1 | |||||||||||||||||
| Micron Technology Inc. 53E1G16D1FW-046 WT:A TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -30°C ~ 85°C (TC) | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | 557-MT53E1G16D1FW-046WT:ATR | 2,000 | 2.133 GHz | Volatile | 16Gbit | 3.5 ns | DRAM | 1G x 16 | Parallel | 18ns | |||||
|
Micron Technology Inc. 29GZ6A6BPIET-046AIT.112 TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 85°C (TA) | Surface Mount | 149-VFBGA | FLASH - NAND (SLC), DRAM - LPDDR4 | 1.06V ~ 1.17V, 1.7V ~ 1.95V | 149-VFBGA (8x9.5) | 557-MT29GZ6A6BPIET-046AIT.112TR | 2,000 | Non-Volatile, Volatile | 8Gbit | 25 ns | FLASH, RAM | 1G x 8 | ONFI | 30ns | |||||
|
Micron Technology Inc. 62F512M32D2DR-031 WT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -25°C ~ 85°C | - | - | SDRAM - Mobile LPDDR5 | - | - | 557-MT62F512M32D2DR-031WT:BTR | 2,000 | 3.2 GHz | Volatile | 16Gbit | DRAM | 512M x 32 | Parallel | - | |||||
|
Micron Technology Inc. 53E512M32D1Z42MWC1 | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | - | Surface Mount | Die | SDRAM - Mobile LPDDR4X | - | Wafer | 557-MT53E512M32D1Z42MWC1 | 1 | Volatile | 16Gbit | DRAM | 512M x 32 | Parallel | - | ||||||
|
Micron Technology Inc. 29F2T08GELCEJ4-QJ:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT29F2T08GELCEJ4-QJ:CTR | 2,000 | ||||||||||||||||||
|
Micron Technology Inc. 53E1G64D4HJ-046 AUT:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 125°C (TC) | Surface Mount | 556-TFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 556-WFBGA (12.4x12.4) | download | 557-MT53E1G64D4HJ-046AUT:CTR | 2,000 | 2.133 GHz | Volatile | 64Gbit | 3.5 ns | DRAM | 1G x 64 | Parallel | 18ns | |||
|
Micron Technology Inc. 53E512M16D1Z11MWC1 | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | - | Surface Mount | Die | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | Wafer | 557-MT53E512M16D1Z11MWC1 | 1 | Volatile | 8Gbit | 3.5 ns | DRAM | 512M x 16 | Parallel | 18ns | |||||
|
Micron Technology Inc. 62F2G32D4DS-023 IT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -40°C ~ 95°C | Surface Mount | 200-WFBGA | SDRAM - Mobile LPDDR5 | 1.05V | 200-WFBGA (10x14.5) | 557-MT62F2G32D4DS-023IT:BTR | 2,000 | 2.133 GHz | Volatile | 64Gbit | DRAM | 2G x 32 | Parallel | - | |||||
|
Micron Technology Inc. 53E512M64D4HJ-046 WT:D TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Obsolete | 557-MT53E512M64D4HJ-046WT:DTR | OBSOLETE | 2,000 | |||||||||||||||||
|
Micron Technology Inc. 62F1G32D2DS-023 WT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | - | Surface Mount | 200-WFBGA | SDRAM - Mobile LPDDR5 | 1.05V | 200-WFBGA (10x14.5) | 557-MT62F1G32D2DS-023WT:B | 1 | 4.266 GHz | Volatile | 32Gbit | DRAM | 1G x 32 | Parallel | - | |||||
|
Micron Technology Inc. 40A8G4NEA-062E:F | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | TwinDie™ | Box | Active | 0°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | SDRAM - DDR4 | 1.14V ~ 1.26V | 78-FBGA (7.5x11) | 557-MT40A8G4NEA-062E:F | 1 | 1.6 GHz | Volatile | 32Gbit | 13.75 ns | DRAM | 8G x 4 | Parallel | - | ||||
|
Micron Technology Inc. 53E1536M32D4DE-046 AAT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | -40°C ~ 105°C (TC) | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | 557-MT53E1536M32D4DE-046AAT:B | 1 | 2.133 GHz | Volatile | 48Gbit | 3.5 ns | DRAM | 1.5G x 32 | Parallel | 18ns | ||||
|
Micron Technology Inc. 53E1G64D4HJ-046 AIT:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MT53E1G64D4HJ-046AIT:A | 1 | ||||||||||||||||||
|
Micron Technology Inc. 30AZZZDDB0TPWL-031 W.19R | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MT30AZZZDDB0TPWL-031W.19R | 1 | ||||||||||||||||||
|
Micron Technology Inc. 62F2G32D4DS-023 WT ES:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -25°C ~ 85°C | Surface Mount | 200-WFBGA | SDRAM - Mobile LPDDR5 | 1.05V | 200-WFBGA (10x14.5) | 557-MT62F2G32D4DS-023WTES:BTR | 2,000 | 2.133 GHz | Volatile | 64Gbit | DRAM | 2G x 32 | Parallel | - | |||||
|
Micron Technology Inc. 29F1T08GBLCEJ4-M:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MT29F1T08GBLCEJ4-M:C | 1 | ||||||||||||||||||
|
Micron Technology Inc. 29F2T08EELCHD4-R:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MT29F2T08EELCHD4-R:C | 1 | ||||||||||||||||||
|
Micron Technology Inc. 29F512G08EBLEEJ4-R:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 0°C ~ 70°C | Surface Mount | 132-VBGA | FLASH - NAND (TLC) | 2.6V ~ 3.6V | 132-VBGA (12x18) | 557-MT29F512G08EBLEEJ4-R:E | 1 | Non-Volatile | 512Gbit | FLASH | 64G x 8 | Parallel | - | ||||||
|
Micron Technology Inc. 53E2G32D4DE-046 AIT:A TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 95°C (TC) | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | download | 557-MT53E2G32D4DE-046AIT:ATR | 2,000 | 2.133 GHz | Volatile | 64Gbit | 3.5 ns | DRAM | 2G x 32 | Parallel | 18ns | |||
|
Micron Technology Inc. 62F768M64D4EK-023 WT ES:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | MT62F768 | 557-MT62F768M64D4EK-023WTES:BTR | 1,500 | |||||||||||||||||
|
Micron Technology Inc. 62F1536M64D8CL-026 WT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | - | - | - | SDRAM - Mobile LPDDR5 | - | - | 557-MT62F1536M64D8CL-026WT:BTR | 2,500 | 3.2 GHz | Volatile | 96Gbit | DRAM | 1.5G x 64 | Parallel | - | |||||
|
Micron Technology Inc. FC32GAZAOTD-AIT TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MTFC32GAZAOTD-AITTR | 2,000 | ||||||||||||||||||
|
Micron Technology Inc. 62F2G32D4DS-023 WT ES:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -25°C ~ 85°C | Surface Mount | 200-WFBGA | SDRAM - Mobile LPDDR5 | 1.05V | 200-WFBGA (10x14.5) | 557-MT62F2G32D4DS-023WTES:CTR | 2,000 | 2.133 GHz | Volatile | 64Gbit | DRAM | 2G x 32 | Parallel | - | |||||
| Rohm Semiconductor BR34E02NUX-3BZTR | Rohm Semiconductor |
Min: 1 Mult: 1 |
/image/Rohm Semiconductor | - | Tape & Reel (TR) | Active | -40°C ~ 85°C (TA) | Surface Mount | 8-UFDFN Exposed Pad | EEPROM | 1.7V ~ 5.5V | VSON008X2030 | download | 846-BR34E02NUX-3BZTR | 1 | 400 kHz | Non-Volatile | 2Kbit | EEPROM | 256 x 8 | I²C | 5ms | |||||
|
Alliance Memory, Inc. AS6C1616B-55TINTR | Alliance Memory, Inc. |
Min: 1 Mult: 1 |
/image/Alliance Memory, Inc. | - | Tape & Reel (TR) | Active | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | SRAM - Asynchronous | 2.7V ~ 3.6V | 48-TSOP I | download | 3 (168 Hours) | 1450-AS6C1616B-55TINTR | 1,500 | Volatile | 16Mbit | 55 ns | SRAM | 1M x 16 | Parallel | 55ns | |||
|
Alliance Memory, Inc. AS4C8M32MSB-6BINTR | Alliance Memory, Inc. |
Min: 1 Mult: 1 |
/image/Alliance Memory, Inc. | - | Tape & Reel (TR) | Active | -40°C ~ 85°C (TA) | Surface Mount | 90-VFBGA | SDRAM | 1.7V ~ 1.95V | 90-FBGA (8x13) | download | 3 (168 Hours) | 1450-AS4C8M32MSB-6BINTR | 2,000 | 166 MHz | Volatile | 256Mbit | 5.5 ns | DRAM | 8M x 32 | Parallel | 15ns | ||
|
Alliance Memory, Inc. AS6C6264-55PCNTR | Alliance Memory, Inc. |
Min: 1 Mult: 1 |
/image/Alliance Memory, Inc. | - | Tape & Reel (TR) | Active | 0°C ~ 70°C (TA) | Through Hole | 28-DIP (0.600", 15.24mm) | SRAM - Asynchronous | 2.7V ~ 5.5V | 28-PDIP | download | 1 (Unlimited) | 1450-AS6C6264-55PCNTR | 1,000 | Volatile | 64Kbit | 55 ns | SRAM | 8K x 8 | Parallel | 55ns | |||
|
Alliance Memory, Inc. AS1C8M16PL-70BINTR | Alliance Memory, Inc. |
Min: 1 Mult: 1 |
/image/Alliance Memory, Inc. | - | Tape & Reel (TR) | Active | -30°C ~ 85°C (TC) | Surface Mount | 49-VFBGA | PSRAM (Pseudo SRAM) | 1.7V ~ 1.95V | 49-FBGA (4x4) | download | 3 (168 Hours) | 1450-AS1C8M16PL-70BINTR | 2,000 | 133 MHz | Volatile | 128Mbit | 70 ns | PSRAM | 8M x 16 | Parallel | - |
