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Switches
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- View More >>
Memory(66694)
| Image | Name | Manufacturer | Quantity | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Technology | Voltage - Supply | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Clock Frequency | Memory Type | Memory Size | Access Time | Memory Format | Memory Organization | Memory Interface | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
Winbond Electronics W25N02KWZEIU | Winbond Electronics |
Min: 1 Mult: 1 |
/image/Winbond Electronics | SpiFlash® | Tube | Active | -40°C ~ 85°C (TA) | Surface Mount | 8-WDFN Exposed Pad | FLASH - NAND (SLC) | 1.7V ~ 1.95V | 8-WSON (8x6) | download | ROHS3 Compliant | 3 (168 Hours) | 256-W25N02KWZEIU | 3A991B1A | 8542.32.0071 | 63 | 104 MHz | Non-Volatile | 2Gbit | 8 ns | FLASH | 256M x 8 | SPI - Quad I/O | 700µs | |
|
Winbond Electronics W25Q32JVUUIQ TR | Winbond Electronics |
Min: 1 Mult: 1 |
/image/Winbond Electronics | SpiFlash® | Tape & Reel (TR) | Active | -40°C ~ 85°C (TA) | Surface Mount | 8-UFDFN Exposed Pad | FLASH - NOR (SLC) | 2.7V ~ 3.6V | 8-USON (4x3) | download | ROHS3 Compliant | 3 (168 Hours) | 256-W25Q32JVUUIQTR | 3A991B1A | 8542.32.0071 | 5,000 | 133 MHz | Non-Volatile | 32Mbit | 6 ns | FLASH | 4M x 8 | SPI - Quad I/O, QPI | 3ms | |
|
Winbond Electronics W955N8MBYA5I TR | Winbond Electronics |
Min: 1 Mult: 1 |
/image/Winbond Electronics | - | Tape & Reel (TR) | Active | -40°C ~ 85°C (TC) | Surface Mount | 24-TBGA | HyperRAM | 2.7V ~ 3.6V | 24-TFBGA (8x6) | download | ROHS3 Compliant | 3 (168 Hours) | 256-W955N8MBYA5ITR | 2,000 | 200 MHz | Volatile | 32Mbit | 35 ns | DRAM | 4M x 8 | HyperBus | 35ns | |||
|
Winbond Electronics W955K8MBYA5I | Winbond Electronics |
Min: 1 Mult: 1 |
/image/Winbond Electronics | - | Tray | Active | -40°C ~ 85°C (TC) | Surface Mount | 24-TBGA | HyperRAM | 1.7V ~ 2V | 24-TFBGA (6x8) | download | ROHS3 Compliant | 3 (168 Hours) | 256-W955K8MBYA5I | 312 | 200 MHz | Volatile | 32Mbit | 35 ns | DRAM | 4M x 8 | HyperBus | 35ns | |||
| Winbond Electronics W29N08GZSIBF | Winbond Electronics |
Min: 1 Mult: 1 |
/image/Winbond Electronics | - | Tray | Active | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | FLASH - NAND (SLC) | 1.7V ~ 1.95V | 48-TSOP | download | ROHS3 Compliant | 3 (168 Hours) | 256-W29N08GZSIBF | 3A991B1A | 8542.32.0071 | 96 | Non-Volatile | 8Gbit | 25 ns | FLASH | 1G x 8 | ONFI | 35ns, 700µs | |||
| ISSI, Integrated Silicon Solution Inc IS46LD32640B-18BLA2 | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
/image/ISSI, Integrated Silicon Solution Inc | - | Bulk | Last Time Buy | -40°C ~ 105°C (TC) | Surface Mount | 134-TFBGA | SDRAM - Mobile LPDDR2-S4 | 1.14V ~ 1.3V, 1.7V ~ 1.95V | 134-TFBGA (10x11.5) | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 706-IS46LD32640B-18BLA2 | 1 | 533 MHz | Volatile | 2Gbit | 5.5 ns | DRAM | 64M x 32 | HSUL_12 | 15ns | |||
| ISSI, Integrated Silicon Solution Inc IS46LD32640B-18BLA2-TR | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
/image/ISSI, Integrated Silicon Solution Inc | - | Bulk | Last Time Buy | -40°C ~ 105°C (TC) | Surface Mount | 134-TFBGA | SDRAM - Mobile LPDDR2-S4 | 1.14V ~ 1.3V, 1.7V ~ 1.95V | 134-TFBGA (10x11.5) | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 706-IS46LD32640B-18BLA2-TR | 1 | 533 MHz | Volatile | 2Gbit | 5.5 ns | DRAM | 64M x 32 | HSUL_12 | 15ns | |||
|
Micron Technology Inc. 29VZZZCDAFQKWL-046 W.G0L | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | -25°C ~ 85°C | Surface Mount | 254-BGA | FLASH - NAND, DRAM - LPDDR4X | - | 254-TFBGA | 557-MT29VZZZCDAFQKWL-046W.G0L | 1 | 2.133 GHz | Non-Volatile, Volatile | 2Tbit (NAND), 64Gbit (LPDDR4X) | FLASH, RAM | 256G x 8 (NAND), 2G x 32 (LPDDR4X) | UFS2.1 | - | |||||||
| Micron Technology Inc. 53E256M32D2FW-046 AUT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Last Time Buy | -40°C ~ 125°C (TC) | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | download | 557-MT53E256M32D2FW-046AUT:BTR | 2,000 | 2.133 GHz | Volatile | 8Gbit | 3.5 ns | DRAM | 256M x 32 | Parallel | 18ns | ||||||
|
Micron Technology Inc. 62F2G64D8EK-023 WT ES:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | -25°C ~ 85°C | Surface Mount | 441-TFBGA | SDRAM - Mobile LPDDR5 | 1.05V | 441-TFBGA (14x14) | 557-MT62F2G64D8EK-023WTES:B | 1 | 4.266 GHz | Volatile | 128Gbit | DRAM | 2G x 64 | Parallel | - | |||||||
|
Micron Technology Inc. 53E512M64D2HJ-046 AUT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | -40°C ~ 125°C (TC) | Surface Mount | 556-TFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 556-WFBGA (12.4x12.4) | 557-MT53E512M64D2HJ-046AUT:B | 1 | 2.133 GHz | Volatile | 32Gbit | 3.5 ns | DRAM | 512M x 64 | Parallel | 18ns | ||||||
|
Micron Technology Inc. 53E128M32D2FW-046 AIT:A TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT53E128M32D2FW-046AIT:ATR | 2,000 | ||||||||||||||||||||
|
Micron Technology Inc. 60B2G8HB-48B:A TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 0°C ~ 95°C (TC) | Surface Mount | 82-VFBGA | SDRAM - DDR5 | - | 82-VFBGA (9x11) | 557-MT60B2G8HB-48B:ATR | 3,000 | 2.4 GHz | Volatile | 16Gbit | 16 ns | DRAM | 2G x 8 | POD | - | ||||||
|
Micron Technology Inc. 29F2T08EELCHD4-M:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT29F2T08EELCHD4-M:CTR | 2,000 | ||||||||||||||||||||
|
Micron Technology Inc. 29F1T08EELEEJ4-M:E TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT29F1T08EELEEJ4-M:ETR | 2,000 | ||||||||||||||||||||
|
Micron Technology Inc. 62F4G32D8DV-023 WT ES:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -25°C ~ 85°C | - | - | SDRAM - Mobile LPDDR5 | - | - | 557-MT62F4G32D8DV-023WTES:BTR | 2,000 | 4.266 GHz | Volatile | 128Gbit | DRAM | 4G x 32 | Parallel | - | |||||||
|
Micron Technology Inc. 62F1536M32D4DS-026 WT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT62F1536M32D4DS-026WT:BTR | 2,000 | ||||||||||||||||||||
|
Micron Technology Inc. 53E512M64D2HJ-046 AIT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | -40°C ~ 95°C (TC) | Surface Mount | 556-TFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 556-WFBGA (12.4x12.4) | 557-MT53E512M64D2HJ-046AIT:B | 1 | 2.133 GHz | Volatile | 32Gbit | 3.5 ns | DRAM | 512M x 64 | Parallel | 18ns | ||||||
|
Micron Technology Inc. 53E1G32D4NQ-053 RS WT:J | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MT53E1G32D4NQ-053RSWT:J | 1 | ||||||||||||||||||||
|
Micron Technology Inc. 29GZ6A6BPIET-046AAT.112 | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | -40°C ~ 105°C (TA) | Surface Mount | 149-VFBGA | FLASH - NAND (SLC), DRAM - LPDDR4 | 1.06V ~ 1.17V, 1.7V ~ 1.95V | 149-VFBGA (8x9.5) | 557-MT29GZ6A6BPIET-046AAT.112 | 1 | 2.133 GHz | Non-Volatile, Volatile | 8Gbit (NAND), 8Gbit (LPDDR4) | 25 ns | FLASH, RAM | 1G x 8 (NAND), 512M x 16 (LPDDR4) | ONFI | 20ns, 30ns | ||||||
|
Micron Technology Inc. 62F4G32D8DV-023 WT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | -25°C ~ 85°C | - | - | SDRAM - Mobile LPDDR5 | - | - | 557-MT62F4G32D8DV-023WT:B | 1 | 4.266 GHz | Volatile | 128Gbit | DRAM | 4G x 32 | Parallel | - | |||||||
|
Micron Technology Inc. 29F8T08EQLCHL5-QA:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MT29F8T08EQLCHL5-QA:C | 1 | ||||||||||||||||||||
|
Micron Technology Inc. 29VZZZCD9GQKPR-046 W.12L | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MT29VZZZCD9GQKPR-046W.12L | 1 | ||||||||||||||||||||
|
Micron Technology Inc. 62F1G32D2DS-023 AUT:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | - | Surface Mount | 200-WFBGA | SDRAM - Mobile LPDDR5 | 1.05V | 200-WFBGA (10x14.5) | 557-MT62F1G32D2DS-023AUT:C | 1 | 4.266 GHz | Volatile | 32Gbit | DRAM | 1G x 32 | Parallel | - | |||||||
|
Micron Technology Inc. 29F1T08EBLCHD4-R:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT29F1T08EBLCHD4-R:CTR | 2,000 | ||||||||||||||||||||
|
Micron Technology Inc. 29GZ5A5BPGGA-046AIT.87J TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 85°C (TA) | Surface Mount | 149-WFBGA | FLASH - NAND (SLC), DRAM - LPDDR4 | 1.06V ~ 1.17V, 1.7V ~ 1.95V | 149-WFBGA (8x9.5) | 557-MT29GZ5A5BPGGA-046AIT.87JTR | 2,000 | Non-Volatile, Volatile | 4Gbit | 25 ns | FLASH, RAM | 512M x 8 | ONFI | 30ns | |||||||
|
Micron Technology Inc. 29F4T08EULCEM4-QJ:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MT29F4T08EULCEM4-QJ:C | 1 | ||||||||||||||||||||
|
Micron Technology Inc. 29F1T08EBLCHD4-M:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT29F1T08EBLCHD4-M:CTR | 2,000 | ||||||||||||||||||||
|
Micron Technology Inc. 40A256M16LY-075:F TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 0°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | SDRAM - DDR4 | 1.14V ~ 1.26V | 96-FBGA (7.5x13.5) | download | 557-MT40A256M16LY-075:FTR | 2,000 | 1.333 GHz | Volatile | 4Gbit | 19 ns | DRAM | 256M x 16 | POD | 15ns | |||||
|
Micron Technology Inc. 29F8T08EULCHD5-T:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MT29F8T08EULCHD5-T:C | 1 |
