Image | Name | Manufacturer | Quantity | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Voltage - Supply | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Clock Frequency | Memory Type | Memory Size | Memory Format | Memory Organization | Memory Interface | Write Cycle Time - Word, Page |
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Micron Technology Inc. 53E128M16D1DS-046 WT:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Obsolete | -30°C ~ 85°C (TC) | MT53E128 | SDRAM - Mobile LPDDR4 | 1.1V | ROHS3 Compliant | 3 (168 Hours) | MT53E128M16D1DS-046WT:A | EAR99 | 8542.32.0036 | 1,360 | 2.133 GHz | Volatile | 2Gbit | DRAM | 128M x 16 | - | - | ||||||
Micron Technology Inc. 53E128M16D1DS-053 WT:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Obsolete | -30°C ~ 85°C (TC) | MT53E128 | SDRAM - Mobile LPDDR4 | 1.1V | ROHS3 Compliant | 3 (168 Hours) | MT53E128M16D1DS-053WT:A | OBSOLETE | 1,360 | 1.866 GHz | Volatile | 2Gbit | DRAM | 128M x 16 | - | - | |||||||
Micron Technology Inc. 53E128M32D2DS-053 AUT:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 125°C (TC) | Surface Mount | 200-WFBGA | MT53E128 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E128M32D2DS-053AUT:A | EAR99 | 8542.32.0036 | 1,360 | 1.866 GHz | Volatile | 4Gbit | DRAM | 128M x 32 | - | - | ||
Micron Technology Inc. 53E1536M32D4DT-046 AIT:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Obsolete | -40°C ~ 95°C (TC) | MT53E1536 | SDRAM - Mobile LPDDR4 | 1.1V | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E1536M32D4DT-046AIT:A | OBSOLETE | 0000.00.0000 | 1,360 | 2.133 GHz | Volatile | 48Gbit | DRAM | 1.5G x 32 | - | - | |||||
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Micron Technology Inc. 53E1G64D4SQ-046 AAT:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Obsolete | -40°C ~ 105°C (TC) | MT53E1G64 | SDRAM - Mobile LPDDR4 | 1.1V | ROHS3 Compliant | 3 (168 Hours) | MT53E1G64D4SQ-046AAT:A | OBSOLETE | 0000.00.0000 | 1,360 | 2.133 GHz | Volatile | 64Gbit | DRAM | 1G x 64 | - | - | |||||
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Micron Technology Inc. 53E1G64D4SQ-046 WT:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Obsolete | -30°C ~ 85°C (TC) | MT53E1G64 | SDRAM - Mobile LPDDR4 | 1.1V | ROHS3 Compliant | 3 (168 Hours) | MT53E1G64D4SQ-046WT:A | OBSOLETE | 0000.00.0000 | 1,360 | 2.133 GHz | Volatile | 64Gbit | DRAM | 1G x 64 | - | - | |||||
Micron Technology Inc. 53E256M16D1DS-046 WT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Active | -30°C ~ 85°C (TC) | MT53E256 | SDRAM - Mobile LPDDR4 | 1.1V | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E256M16D1DS-046WT:B | EAR99 | 8542.32.0036 | 1,360 | 2.133 GHz | Volatile | 4Gbit | DRAM | 256M x 16 | - | - | ||||
Micron Technology Inc. 53E256M32D2DS-046 AIT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 95°C (TC) | Surface Mount | 200-WFBGA | MT53E256 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E256M32D2DS-046AIT:B | EAR99 | 8542.32.0036 | 1,360 | 2.133 GHz | Volatile | 8Gbit | DRAM | 256M x 32 | - | - | ||
Micron Technology Inc. 53E256M32D2DS-046 AUT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Last Time Buy | -40°C ~ 125°C (TC) | Surface Mount | 200-WFBGA | MT53E256 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E256M32D2DS-046AUT:B | EAR99 | 8542.32.0036 | 1,360 | 2.133 GHz | Volatile | 8Gbit | DRAM | 256M x 32 | - | - | ||
Micron Technology Inc. 53E256M32D2DS-046 IT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Active | -40°C ~ 95°C (TC) | Surface Mount | 200-WFBGA | MT53E256 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E256M32D2DS-046IT:B | EAR99 | 8542.32.0036 | 1,360 | 2.133 GHz | Volatile | 8Gbit | DRAM | 256M x 32 | - | - | |
Micron Technology Inc. 53E256M32D2DS-053 WT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Obsolete | -30°C ~ 85°C (TC) | Surface Mount | 200-WFBGA | MT53E256 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | download | ROHS3 Compliant | 3 (168 Hours) | MT53E256M32D2DS-053WT:B | EAR99 | 8542.32.0036 | 1,360 | 1.866 GHz | Volatile | 8Gbit | DRAM | 256M x 32 | - | - | ||
Micron Technology Inc. 53E2G32D4DT-046 AAT:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 105°C (TC) | MT53E2G32 | SDRAM - Mobile LPDDR4 | 1.1V | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E2G32D4DT-046AAT:A | 0000.00.0000 | 1,360 | 2.133 GHz | Volatile | 64Gbit | DRAM | 2G x 32 | - | - | ||||||
Micron Technology Inc. 53E384M32D2DS-046 AIT:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Obsolete | -40°C ~ 95°C (TC) | Surface Mount | 200-WFBGA | MT53E384 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E384M32D2DS-046AIT:E | EAR99 | 8542.32.0036 | 1,360 | 2.133 GHz | Volatile | 12Gbit | DRAM | 384M x 32 | - | - | ||
Micron Technology Inc. 53E384M32D2DS-046 WT:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Obsolete | -30°C ~ 85°C (TC) | Surface Mount | 200-WFBGA | MT53E384 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | MT53E384M32D2DS-046WT:E | EAR99 | 8542.32.0036 | 1,360 | 2.133 GHz | Volatile | 12Gbit | DRAM | 384M x 32 | - | - | |||
Micron Technology Inc. 53E384M32D2DS-053 AIT:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 95°C (TC) | Surface Mount | 200-WFBGA | MT53E384 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E384M32D2DS-053AIT:E | EAR99 | 8542.32.0036 | 1,360 | 1.866 GHz | Volatile | 12Gbit | DRAM | 384M x 32 | - | - | ||
Micron Technology Inc. 53E384M32D2DS-053 AUT:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Obsolete | -40°C ~ 125°C (TC) | Surface Mount | 200-WFBGA | MT53E384 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E384M32D2DS-053AUT:E | EAR99 | 8542.32.0036 | 1,360 | 1.866 GHz | Volatile | 12Gbit | DRAM | 384M x 32 | - | - | ||
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Micron Technology Inc. 53E512M64D4NK-046 WT:D | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Obsolete | -30°C ~ 85°C (TC) | Surface Mount | 366-WFBGA | MT53E512 | SDRAM - Mobile LPDDR4 | 1.1V | 366-WFBGA (15x15) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E512M64D4NK-046WT:D | OBSOLETE | 0000.00.0000 | 1,190 | 2.133 GHz | Volatile | 32Gbit | DRAM | 512M x 64 | - | - | |
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Micron Technology Inc. 53E512M64D4NK-053 WT:D | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Obsolete | -30°C ~ 85°C (TC) | Surface Mount | 366-WFBGA | MT53E512 | SDRAM - Mobile LPDDR4 | 1.1V | 366-WFBGA (15x15) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E512M64D4NK-053WT:D | OBSOLETE | 0000.00.0000 | 1,190 | 1.866 GHz | Volatile | 32Gbit | DRAM | 512M x 64 | - | - | |
Micron Technology Inc. 53E768M32D4DT-046 AAT:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 105°C (TC) | Surface Mount | 200-VFBGA | MT53E768 | SDRAM - Mobile LPDDR4 | 1.1V | 200-VFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E768M32D4DT-046AAT:E | EAR99 | 8542.32.0036 | 1,360 | 2.133 GHz | Volatile | 24Gbit | DRAM | 768M x 32 | - | - | ||
Micron Technology Inc. 53E768M32D4DT-053 AAT:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 125°C (TC) | Surface Mount | 200-VFBGA | MT53E768 | SDRAM - Mobile LPDDR4 | 1.1V | 200-VFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E768M32D4DT-053AAT:E | EAR99 | 8542.32.0036 | 1,360 | 1.866 GHz | Volatile | 24Gbit | DRAM | 768M x 32 | - | - | ||
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Micron Technology Inc. 53E768M64D4SQ-046 AAT:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Obsolete | -40°C ~ 105°C (TC) | MT53E768 | SDRAM - Mobile LPDDR4 | 1.1V | ROHS3 Compliant | 3 (168 Hours) | MT53E768M64D4SQ-046AAT:A | OBSOLETE | 0000.00.0000 | 1,360 | 2.133 GHz | Volatile | 48Gbit | DRAM | 768M x 64 | - | - | |||||
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Micron Technology Inc. 53E768M64D4SQ-046 AIT:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Obsolete | -40°C ~ 95°C (TC) | MT53E768 | SDRAM - Mobile LPDDR4 | 1.1V | ROHS3 Compliant | 3 (168 Hours) | MT53E768M64D4SQ-046AIT:A | OBSOLETE | 0000.00.0000 | 1,360 | 2.133 GHz | Volatile | 48Gbit | DRAM | 768M x 64 | - | - | |||||
Micron Technology Inc. FC4GLGDQ-AIT Z | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Obsolete | -40°C ~ 85°C (TA) | Surface Mount | 100-LBGA | MTFC4 | FLASH - NAND | 2.7V ~ 3.6V | 100-LBGA (14x18) | ROHS3 Compliant | 3 (168 Hours) | MTFC4GLGDQ-AITZ | OBSOLETE | 980 | Non-Volatile | 32Gbit | FLASH | 4G x 8 | MMC | - | |||||
Micron Technology Inc. FC64GAPALBH-IT | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | e•MMC™ | Tray | Obsolete | -40°C ~ 85°C (TA) | Surface Mount | 153-TFBGA | MTFC64 | FLASH - NAND | - | 153-TFBGA (11.5x13) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 3A991B1A | 8542.32.0071 | 1,520 | Non-Volatile | 64Gbit | FLASH | 8G x 8 | MMC | - | ||||
Micron Technology Inc. FC8GACAALT-4M IT | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | e•MMC™ | Tray | Obsolete | -40°C ~ 85°C (TA) | Surface Mount | 100-TBGA | MTFC8 | FLASH - NAND | 2.7V ~ 3.6V | 100-TBGA (14x18) | ROHS3 Compliant | 3 (168 Hours) | MTFC8GACAALT-4MIT | 3A991B1A | 8542.32.0071 | 980 | Non-Volatile | 64Gbit | FLASH | 8G x 8 | MMC | - | ||||
Infineon Technologies CY15B104QN-20LPXI | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | Excelon™-LP,F-RAM™ | Tray | Active | -40°C ~ 85°C (TA) | Surface Mount | 8-UQFN | CY15B104 | FRAM (Ferroelectric RAM) | 1.8V ~ 3.6V | 8-GQFN (3.23x3.28) | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | EAR99 | 8542.32.0071 | 490 | 20 MHz | Non-Volatile | 4Mbit | FRAM | 512K x 8 | SPI | - | ||
Infineon Technologies CY15V104QN-20LPXI | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | Excelon™-LP,F-RAM™ | Tray | Active | -40°C ~ 85°C (TA) | Surface Mount | 8-UQFN | CY15V104 | FRAM (Ferroelectric RAM) | 1.71V ~ 1.89V | 8-GQFN (3.23x3.28) | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | EAR99 | 8542.32.0071 | 490 | 20 MHz | Non-Volatile | 4Mbit | FRAM | 512K x 8 | SPI | - | ||
Infineon Technologies CY15B104QI-20LPXC | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | Excelon™-LP,F-RAM™ | Tray | Active | 0°C ~ 70°C (TA) | Surface Mount | 8-UQFN | CY15B104 | FRAM (Ferroelectric RAM) | 1.8V ~ 3.6V | 8-GQFN (3.23x3.28) | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | EAR99 | 8542.32.0071 | 490 | 20 MHz | Non-Volatile | 4Mbit | FRAM | 512K x 8 | SPI | - | ||
Infineon Technologies CY15B108QN-20LPXC | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | Excelon™-LP,F-RAM™ | Tray | Active | 0°C ~ 70°C (TA) | Surface Mount | 8-UQFN | CY15B108 | FRAM (Ferroelectric RAM) | 1.8V ~ 3.6V | 8-GQFN (3.23x3.28) | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | EAR99 | 8542.32.0071 | 490 | 20 MHz | Non-Volatile | 8Mbit | FRAM | 1M x 8 | SPI | - | ||
Infineon Technologies CY15B108QN-20LPXI | Infineon Technologies |
Min: 1 Mult: 1 |
/image/Infineon Technologies | Excelon™-LP,F-RAM™ | Tray | Active | -40°C ~ 85°C (TA) | Surface Mount | 8-UQFN | CY15B108 | FRAM (Ferroelectric RAM) | 1.8V ~ 3.6V | 8-GQFN (3.23x3.28) | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | EAR99 | 8542.32.0071 | 490 | 20 MHz | Non-Volatile | 8Mbit | FRAM | 1M x 8 | SPI | - |
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