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Sensors, Transducers
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Switches
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- View More >>
Memory(66694)
| Image | Name | Manufacturer | Quantity | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Voltage - Supply | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Clock Frequency | Memory Type | Memory Size | Access Time | Memory Format | Memory Organization | Memory Interface | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
Micron Technology Inc. 29GZ6A6BPIET-53AAT.112 | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | -40°C ~ 105°C (TA) | Surface Mount | 149-VFBGA | FLASH - NAND (SLC), DRAM - LPDDR4 | 1.06V ~ 1.17V, 1.7V ~ 1.95V | 149-VFBGA (8x9.5) | 557-MT29GZ6A6BPIET-53AAT.112 | 1 | Non-Volatile, Volatile | 8Gbit | 25 ns | FLASH, RAM | 1G x 8 | ONFI | 30ns | ||||||||
|
Micron Technology Inc. 29F2T08GELCEJ4-QJ:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MT29F2T08GELCEJ4-QJ:C | 1 | |||||||||||||||||||||
|
Micron Technology Inc. 29F8T08EULCHD5-QA:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT29F8T08EULCHD5-QA:CTR | 2,000 | |||||||||||||||||||||
|
Micron Technology Inc. 62F768M64D4EK-026 WT ES:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -25°C ~ 85°C | Surface Mount | 441-TFBGA | MT62F768 | SDRAM - Mobile LPDDR5 | - | 441-TFBGA (14x14) | 557-MT62F768M64D4EK-026WTES:BTR | 1,500 | 3.2 GHz | Volatile | 48Gbit | DRAM | 768M x 64 | Parallel | - | |||||||
|
Micron Technology Inc. 29GZ6A6BPIET-046IT.112 | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MT29GZ6A6BPIET-046IT.112 | 1 | |||||||||||||||||||||
|
Micron Technology Inc. 29F1T08EELKEJ4-ITF:K | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MT29F1T08EELKEJ4-ITF:K | 1 | |||||||||||||||||||||
|
Micron Technology Inc. 29F4T08EQLEEG8-QB:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MT29F4T08EQLEEG8-QB:E | 1 | |||||||||||||||||||||
| Micron Technology Inc. 53E256M16D1FW-046 AUT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 125°C (TC) | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | download | 557-MT53E256M16D1FW-046AUT:BTR | 2,000 | 2.133 GHz | Volatile | 4Gbit | 3.5 ns | DRAM | 256M x 16 | Parallel | 18ns | |||||||
|
Micron Technology Inc. 29F512G08EBLGEJ4-ITF:G TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT29F512G08EBLGEJ4-ITF:GTR | 2,000 | |||||||||||||||||||||
|
Micron Technology Inc. 53E2G64D8TN-046 AAT:A TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 105°C (TC) | Surface Mount | 556-LFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 556-LFBGA (12.4x12.4) | 557-MT53E2G64D8TN-046AAT:ATR | 2,000 | 2.133 GHz | Volatile | 128Gbit | 3.5 ns | DRAM | 2G x 64 | Parallel | 18ns | |||||||
|
Micron Technology Inc. 29GZ6A6BPIET-53AIT.112 | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | -40°C ~ 85°C (TA) | Surface Mount | 149-VFBGA | FLASH - NAND (SLC), DRAM - LPDDR4 | 1.06V ~ 1.17V, 1.7V ~ 1.95V | 149-VFBGA (8x9.5) | 557-MT29GZ6A6BPIET-53AIT.112 | 1 | Non-Volatile, Volatile | 8Gbit | 25 ns | FLASH, RAM | 1G x 8 | ONFI | 30ns | ||||||||
|
Micron Technology Inc. 53E1536M64D8HJ-046 WT:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -25°C ~ 85°C | Surface Mount | 556-TFBGA | SDRAM - Mobile LPDDR4 | - | 556-WFBGA (12.4x12.4) | 557-MT53E1536M64D8HJ-046WT:CTR | 2,000 | 2.133 GHz | Volatile | 96Gbit | DRAM | 1.5M x 64 | - | - | ||||||||
| Micron Technology Inc. 53E256M32D2FW-046 WT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -30°C ~ 85°C (TC) | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | download | 557-MT53E256M32D2FW-046WT:BTR | 2,000 | 2.133 GHz | Volatile | 8Gbit | 3.5 ns | DRAM | 256M x 32 | Parallel | 18ns | |||||||
|
Micron Technology Inc. 29GZ6A6BPIET-046AIT.112 | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | -40°C ~ 85°C (TA) | Surface Mount | 149-VFBGA | FLASH - NAND (SLC), DRAM - LPDDR4 | 1.06V ~ 1.17V, 1.7V ~ 1.95V | 149-VFBGA (8x9.5) | 557-MT29GZ6A6BPIET-046AIT.112 | 1 | 2.133 GHz | Non-Volatile, Volatile | 8Gbit (NAND), 8Gbit (LPDDR4) | 25 ns | FLASH, RAM | 1G x 8 (NAND), 512M x 16 (LPDDR4) | ONFI | 20ns, 30ns | |||||||
|
Micron Technology Inc. 29F1T08EBLCHD4-QA:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT29F1T08EBLCHD4-QA:CTR | 2,000 | |||||||||||||||||||||
|
onsemi CAT25512YI-G | onsemi |
Min: 1 Mult: 1 |
/image/onsemi | - | Bulk | Obsolete | 488-CAT25512YI-G | OBSOLETE | 1 | ||||||||||||||||||||
|
onsemi CAT93C46BYI-G | onsemi |
Min: 1 Mult: 1 |
/image/onsemi | - | Bulk | Obsolete | 488-CAT93C46BYI-G | OBSOLETE | 1 | ||||||||||||||||||||
| Micron Technology Inc. 53E128M32D2FW-046 WT:A TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -25°C ~ 85°C (TC) | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4 | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | ROHS3 Compliant | 557-MT53E128M32D2FW-046WT:ATR | 1 | 2.133 GHz | Volatile | 4Gbit | 3.5 ns | DRAM | 128M x 32 | Parallel | 18ns | |||||||
| Micron Technology Inc. 53E768M32D4DE-046 WT:E TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -25°C ~ 85°C | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4 | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | 557-MT53E768M32D4DE-046WT:ETR | 1 | 2.133 GHz | Volatile | 24Gbit | 3.5 ns | DRAM | 768M x 32 | Parallel | 18ns | ||||||||
| Micron Technology Inc. 53E384M32D2FW-046 WT:E TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -25°C ~ 85°C | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4 | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | ROHS3 Compliant | 557-MT53E384M32D2FW-046WT:ETR | 1 | 2.133 GHz | Volatile | 12Gbit | 3.5 ns | DRAM | 384M x 32 | Parallel | 18ns | |||||||
|
Micron Technology Inc. 53E768M64D4HJ-046 AAT:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Bulk | Obsolete | -40°C ~ 105°C (TC) | Surface Mount | 556-TFBGA | SDRAM - Mobile LPDDR4 | 1.06V ~ 1.17V | 556-WFBGA (12.4x12.4) | ROHS3 Compliant | 557-MT53E768M64D4HJ-046AAT:A | OBSOLETE | 1 | 2.133 GHz | Volatile | 48Gbit | 3.5 ns | DRAM | 768M x 64 | Parallel | 18ns | |||||
| Micron Technology Inc. 53E768M64D4HJ-046 AAT:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 105°C (TC) | Surface Mount | 556-TFBGA | SDRAM - Mobile LPDDR4 | 1.06V ~ 1.17V | 556-WFBGA (12.4x12.4) | ROHS3 Compliant | 557-MT53E768M64D4HJ-046AAT:CTR | 2,000 | 2.133 GHz | Volatile | 48Gbit | 3.5 ns | DRAM | 768M x 64 | Parallel | 18ns | |||||||
| Micron Technology Inc. 53E1536M32D4DE-046 AIT:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 95°C (TC) | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4 | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | ROHS3 Compliant | 557-MT53E1536M32D4DE-046AIT:CTR | 2,000 | 2.133 GHz | Volatile | 48Gbit | 3.5 ns | DRAM | 1.5G x 32 | Parallel | 18ns | |||||||
| Micron Technology Inc. 53E768M64D4HJ-046 AIT:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 95°C (TC) | Surface Mount | 556-TFBGA | SDRAM - Mobile LPDDR4 | 1.06V ~ 1.17V | 556-WFBGA (12.4x12.4) | ROHS3 Compliant | 557-MT53E768M64D4HJ-046AIT:CTR | 2,000 | 2.133 GHz | Volatile | 48Gbit | 3.5 ns | DRAM | 768M x 64 | Parallel | 18ns | |||||||
|
onsemi N24C16UDTG | onsemi |
Min: 1 Mult: 1 |
/image/onsemi | - | Tape & Reel (TR) | Active | -40°C ~ 85°C (TA) | Surface Mount | 8-VFSOP (0.091", 2.30mm Width) | EEPROM | 1.7V ~ 5.5V | US8 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 488-N24C16UDTGTR | EAR99 | 8542.32.0051 | 3,000 | 1 MHz | Non-Volatile | 16Kbit | 450 ns | EEPROM | 2K x 8 | I²C | 4ms | |
| Kingston D2516ACXGXGRK-U | Kingston |
Min: 1 Mult: 1 |
/image/Kingston | - | Tray | Active | 0°C ~ 95°C | Surface Mount | SDRAM - DDR4 | 1.2V | download | ROHS3 Compliant | 3 (168 Hours) | 3217-D2516ACXGXGRK-U | EAR99 | 8542.31.0001 | 1 | Volatile | DRAM | Parallel | ||||||||||
|
Microchip Technology 24CS256T-I/Q4B | Microchip Technology |
Min: 1 Mult: 1 |
/image/Microchip Technology | - | Tape & Reel (TR) | Active | -40°C ~ 85°C (TA) | Surface Mount | 8-UFDFN Exposed Pad | EEPROM | 1.7V ~ 5.5V | 8-UDFN (2x3) | download | 150-24CS256T-I/Q4BTR | 5,000 | 3.4 MHz | Non-Volatile | 256Kbit | 70 ns | EEPROM | 32K x 8 | I²C | 5ms | ||||||
|
Micron Technology Inc. 29F2T08EELCHL4-QA:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT29F2T08EELCHL4-QA:CTR | 2,000 | |||||||||||||||||||||
|
Micron Technology Inc. 62F1536M64D8EK-023 AIT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 95°C | Surface Mount | 441-TFBGA | SDRAM - Mobile LPDDR5 | - | 441-TFBGA (14x14) | 557-MT62F1536M64D8EK-023AIT:BTR | 1,500 | 4.266 GHz | Volatile | 96Gbit | DRAM | 1.5G x 64 | Parallel | - | ||||||||
|
Micron Technology Inc. 60B2G8HS-48B AAT:A TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 105°C (TC) | - | - | SDRAM - DDR5 | - | - | 557-MT60B2G8HS-48BAAT:ATR | 3,000 | 2.4 GHz | Volatile | 16Gbit | 16 ns | DRAM | 2G x 8 | POD | - |
