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Infineon Technologies IMW65R048M1HXKSA1
IMW65R048M1HXKSA1
- Manufacturer: Infineon Technologies
- Origchip NO: IMW65R048M1HXKSA1
- Package: TO-247-3
- Datasheet:
PDF - Stock: 1
- Description: IMW65R048M1HXKSA1(Kg)
Quantity:
Qty
Unit Price
Ext Price
-
10
$14.83
$148.33
-
100
$12.53
$1,252.77
-
500
$11.14
$5,572.10
Not the price you want? Send RFQ Now and we'll contact you ASAP.
In Stock
Please send RFQ , we will respond immediately.
Purchase
You may place an order without registering to SERDIA.
We strongly suggest you sign in before purchasing as you
can track your order in real time.
For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.
RFQ (Request for Quotations)It is recommended to request for quotations to get the latest
prices and inventories about the part.
Our sales will reply to
your request by email within 24 hours.
1. You'll receive an order information email in your inbox.
(Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some
extent, the sales manager is going to reconfirm the order and let you know if there
are any updates.
Shipping Cost
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | CoolSIC™ M1 |
| Package | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 39A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 64mOhm @ 20.1A, 18V |
| Vgs(th) (Max) @ Id | 5.7V @ 6mA |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 18 V |
| Vgs (Max) | +23V, -5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1118 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-3-41 |
| Package / Case | TO-247-3 |
| Base Product Number | IMW65R048 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 30 |
N-Channel 650 V 39A (Tc) 125W (Tc) Through Hole PG-TO247-3-41
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