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ALLCHIPS ELECTRONICS LIMITED

Infineon Technologies IMW65R027M1HXKSA1

IMW65R027M1HXKSA1


  • Manufacturer: Infineon Technologies
  • Origchip NO: IMW65R027M1HXKSA1
  • Package: TO-247-3
  • Datasheet: pdfPDF
  • Stock: 7770
  • Description: IMW65R027M1HXKSA1(Kg)

Quantity:

Qty

Unit Price

Ext Price

  • 10

    $23.72

    $237.22

  • 100

    $20.26

    $2,025.68

  • 500

    $18.39

    $9,195.50

Not the price you want? Send RFQ Now and we'll contact you ASAP.

In Stock

Please send RFQ , we will respond immediately.

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to SERDIA.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.

SPECIFICATIONS

Parameters
Series CoolSIC™ M1
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 34mOhm @ 38.3A, 18V
Vgs(th) (Max) @ Id 5.7V @ 11mA
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 18 V
Vgs (Max) +23V, -5V
Input Capacitance (Ciss) (Max) @ Vds 2131 pF @ 400 V
FET Feature -
Power Dissipation (Max) 189W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-41
Package / Case TO-247-3
Base Product Number IMW65R027
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
Mfr Infineon Technologies
N-Channel 650 V 47A (Tc) 189W (Tc) Through Hole PG-TO247-3-41

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In Stock

Please send RFQ , we will respond immediately.