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ALLCHIPS ELECTRONICS LIMITED

Fairchild Semiconductor FJN3304RTA

FJN3304RTA


  • Manufacturer: Fairchild Semiconductor
  • Origchip NO: FJN3304RTA
  • Package: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Datasheet: pdfPDF
  • Stock: 1337
  • Description: FJN3304RTA(Kg)

Quantity:

Qty

Unit Price

Ext Price

  • 2000

    $0.02

    $40.00

Not the price you want? Send RFQ Now and we'll contact you ASAP.

In Stock

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Purchase & Inquiry

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Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.

SPECIFICATIONS

Parameters
Power - Max 300 mW
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3
Base Product Number FJN330
RoHS Status ROHS3 Compliant
ECCN EAR99
HTSUS 8541.21.0075
Standard Package 2,000
Mfr Fairchild Semiconductor
Series -
Package Bulk
Product Status Obsolete
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 47 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 250 MHz
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 300 mW Through Hole TO-92-3

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