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ALLCHIPS ELECTRONICS LIMITED

Toshiba Semiconductor and Storage RN1965FE(TE85L,F)

RN1965FE(TE85L,F)


  • Manufacturer: Toshiba Semiconductor and Storage
  • Origchip NO: RN1965FE(TE85L,F)
  • Package: SOT-563, SOT-666
  • Datasheet: pdfPDF
  • Stock: 20
  • Description: RN1965FE(TE85L,F)(Kg)

Quantity:

Qty

Unit Price

Ext Price

  • 10

    $0.08

    $0.77

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In Stock

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Means of Payment

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RFQ (Request for Quotations)

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Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.

SPECIFICATIONS

Parameters
Mfr Toshiba Semiconductor and Storage
Series -
Package Tape & Reel (TR)
Product Status Obsolete
Transistor Type 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 2.2kOhms
Resistor - Emitter Base (R2) 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 250MHz
Power - Max 100mW
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package ES6
Base Product Number RN1965
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Standard Package 4,000
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6

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