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Toshiba Semiconductor and Storage TK35N65W,S1F
TK35N65W,S1F
- Manufacturer: Toshiba Semiconductor and Storage
- Origchip NO: TK35N65W,S1F
- Package: TO-247-3
- Datasheet:
PDF - Stock: 25
- Description: TK35N65W,S1F(Kg)
Quantity:
Qty
Unit Price
Ext Price
-
10
$7.10
$71.02
-
100
$5.88
$587.99
-
500
$5.12
$2,560.05
-
1000
$4.46
$4,459.50
-
2000
$4.29
$8,588.60
Not the price you want? Send RFQ Now and we'll contact you ASAP.
In Stock
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Our sales will reply to
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Shipping Cost
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.| Parameters | |
|---|---|
| Mfr | Toshiba Semiconductor and Storage |
| Series | DTMOSIV |
| Package | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 35A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 17.5A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 2.1mA |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 4100 pF @ 300 V |
| FET Feature | - |
| Power Dissipation (Max) | 270W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247 |
| Package / Case | TO-247-3 |
| Base Product Number | TK35N65 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 30 |
N-Channel 650 V 35A (Ta) 270W (Tc) Through Hole TO-247
