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ALLCHIPS ELECTRONICS LIMITED

Vishay Siliconix SIHP12N65E-GE3

SIHP12N65E-GE3


  • Manufacturer: Vishay Siliconix
  • Origchip NO: SIHP12N65E-GE3
  • Package: TO-220-3
  • Datasheet: pdfPDF
  • Stock: 3411
  • Description: SIHP12N65E-GE3(Kg)

Quantity:

Qty

Unit Price

Ext Price

  • 10

    $2.13

    $21.29

  • 100

    $1.71

    $171.09

  • 500

    $1.41

    $702.85

  • 1000

    $1.16

    $1,164.70

  • 2000

    $1.08

    $2,168.80

  • 5000

    $1.04

    $5,221.00

Not the price you want? Send RFQ Now and we'll contact you ASAP.

In Stock

Please send RFQ , we will respond immediately.

Purchase & Inquiry

Transport

Purchase

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We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.

SPECIFICATIONS

Parameters
Mfr Vishay Siliconix
Series -
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1224 pF @ 100 V
FET Feature -
Power Dissipation (Max) 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number SIHP12
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1,000
N-Channel 650 V 12A (Tc) 156W (Tc) Through Hole TO-220AB

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