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| Compare | Image | Name | Manufacturer | Quantity | Weight(Kg) | Size(LxWxH) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Voltage - Supply | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Clock Frequency | Memory Type | Memory Size | Access Time | Memory Format | Memory Organization | Memory Interface | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Micron Technology Inc. 53E1G64D4NZ-46 WT:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -25°C ~ 85°C (TC) | Surface Mount | 376-WFBGA | MT53E1G64 | SDRAM - Mobile LPDDR4 | 1.06V ~ 1.17V | 376-WFBGA (14x14) | REACH Unaffected | 557-MT53E1G64D4NZ-46WT:CTR | 2,000 | 2.133 GHz | Volatile | 64Gbit | 3.5 ns | DRAM | 1G x 64 | Parallel | 18ns | |||||||||
| Micron Technology Inc. 53E512M64D2NZ-46 WT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -25°C ~ 85°C (TC) | Surface Mount | 376-WFBGA | MT53E512 | SDRAM - Mobile LPDDR4 | 1.06V ~ 1.17V | 376-WFBGA (14x14) | download | ROHS3 Compliant | REACH Unaffected | 557-MT53E512M64D2NZ-46WT:BTR | 2,000 | 2.133 GHz | Volatile | 32Gbit | 3.5 ns | DRAM | 512M x 64 | Parallel | 18ns | |||||||
| Micron Technology Inc. 53E1G64D4NZ-46 WT:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Active | -25°C ~ 85°C (TC) | Surface Mount | 376-WFBGA | MT53E1G64 | SDRAM - Mobile LPDDR4 | 1.06V ~ 1.17V | 376-WFBGA (14x14) | REACH Unaffected | 557-MT53E1G64D4NZ-46WT:C | 1,190 | 2.133 GHz | Volatile | 64Gbit | 3.5 ns | DRAM | 1G x 64 | Parallel | 18ns | |||||||||
| Micron Technology Inc. 40A4G8NEA-062E:F TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | TwinDie™ | Tape & Reel (TR) | Active | 0°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | MT40A4G8 | SDRAM - DDR4 | 1.14V ~ 1.26V | 78-FBGA (7.5x11) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 557-MT40A4G8NEA-062E:FTR | 2,000 | 1.6 GHz | Volatile | 32Gbit | 13.75 ns | DRAM | 4G x 8 | Parallel | - | |||||||
| Micron Technology Inc. 40A4G8NEA-062E:F | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | TwinDie™ | Tray | Active | 0°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | MT40A4G8 | SDRAM - DDR4 | 1.14V ~ 1.26V | 78-FBGA (7.5x11) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 557-MT40A4G8NEA-062E:F | 1,260 | 1.6 GHz | Volatile | 32Gbit | 13.75 ns | DRAM | 4G x 8 | Parallel | - | |||||||
| Micron Technology Inc. 53E512M64D2HJ-046 WT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Active | -25°C ~ 85°C (TC) | Surface Mount | 556-TFBGA | MT53E512 | SDRAM - Mobile LPDDR4 | 1.06V ~ 1.17V | 556-WFBGA (12.4x12.4) | download | ROHS3 Compliant | REACH Unaffected | 557-MT53E512M64D2HJ-046WT:B | 1 | 2.133 GHz | Volatile | 32Gbit | 3.5 ns | DRAM | 512M x 64 | Parallel | 18ns | |||||||
| Micron Technology Inc. 53D512M32D2DS-046 WT:D TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Obsolete | -30°C ~ 85°C (TC) | Surface Mount | 200-WFBGA | MT53D512 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | MT53D512M32D2DS-046WT:DTR | EAR99 | 8542.32.0036 | 2,000 | 2.133 GHz | Volatile | 16Gbit | DRAM | 512M x 32 | - | - | |||||||
| Micron Technology Inc. 53D512M32D2DS-053 AUT:D TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Last Time Buy | -40°C ~ 125°C (TC) | Surface Mount | 200-WFBGA | MT53D512 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53D512M32D2DS-053AUT:DTR | EAR99 | 8542.32.0036 | 2,000 | 1.866 GHz | Volatile | 16Gbit | DRAM | 512M x 32 | - | - | ||||||
 |
Micron Technology Inc. 53D512M64D4HR-053 WT:D TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Obsolete | -30°C ~ 85°C (TC) | Surface Mount | 366-WFBGA | MT53D512 | SDRAM - Mobile LPDDR4 | 1.1V | 366-WFBGA (12x12.7) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53D512M64D4HR-053WT:DTR | OBSOLETE | 0000.00.0000 | 2,000 | 1.866 GHz | Volatile | 32Gbit | DRAM | 512M x 64 | - | - | |||||
|
Micron Technology Inc. 53D512M64D8HR-053 WT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Obsolete | -30°C ~ 85°C (TC) | Surface Mount | 366-WFBGA | MT53D512 | SDRAM - Mobile LPDDR4 | 1.1V | 366-WFBGA (12x12.7) | ROHS3 Compliant | 3 (168 Hours) | MT53D512M64D8HR-053WT:BTR | OBSOLETE | 0000.00.0000 | 2,000 | 1.866 GHz | Volatile | 32Gbit | DRAM | 512M x 64 | - | - | ||||||
|
Micron Technology Inc. 53D768M32D2DS-046 WT:A TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -30°C ~ 85°C (TC) | MT53D768 | SDRAM - Mobile LPDDR4 | 1.1V | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53D768M32D2DS-046WT:ATR | 0000.00.0000 | 2,000 | 2.133 GHz | Volatile | 24Gbit | DRAM | 768M x 32 | - | - | |||||||||
| Micron Technology Inc. 53E128M16D1DS-046 AIT:A TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Obsolete | -40°C ~ 95°C (TC) | MT53E128 | SDRAM - Mobile LPDDR4 | 1.1V | ROHS3 Compliant | 3 (168 Hours) | MT53E128M16D1DS-046AIT:ATR | OBSOLETE | 2,000 | 2.133 GHz | Volatile | 2Gbit | DRAM | 128M x 16 | - | - | |||||||||||
| Micron Technology Inc. 53E128M16D1DS-046 WT:A TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Obsolete | -30°C ~ 85°C (TC) | MT53E128 | SDRAM - Mobile LPDDR4 | 1.1V | ROHS3 Compliant | 3 (168 Hours) | MT53E128M16D1DS-046WT:ATR | EAR99 | 8542.32.0036 | 2,000 | 2.133 GHz | Volatile | 2Gbit | DRAM | 128M x 16 | - | - | ||||||||||
| Micron Technology Inc. 53E128M16D1DS-053 AAT:A TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Obsolete | -40°C ~ 105°C (TC) | MT53E128 | SDRAM - Mobile LPDDR4 | 1.1V | ROHS3 Compliant | 3 (168 Hours) | MT53E128M16D1DS-053AAT:ATR | OBSOLETE | 0000.00.0000 | 2,000 | 1.866 GHz | Volatile | 2Gbit | DRAM | 128M x 16 | - | - | ||||||||||
| Micron Technology Inc. 53E128M16D1DS-053 WT:A TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Obsolete | -30°C ~ 85°C (TC) | MT53E128 | SDRAM - Mobile LPDDR4 | 1.1V | ROHS3 Compliant | 3 (168 Hours) | MT53E128M16D1DS-053WT:ATR | OBSOLETE | 2,000 | 1.866 GHz | Volatile | 2Gbit | DRAM | 128M x 16 | - | - | |||||||||||
| Micron Technology Inc. 53E128M32D2DS-046 AUT:A TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 125°C (TC) | Surface Mount | 200-WFBGA | MT53E128 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E128M32D2DS-046AUT:ATR | EAR99 | 8542.32.0036 | 2,000 | 2.133 GHz | Volatile | 4Gbit | DRAM | 128M x 32 | - | - | ||||||
| Micron Technology Inc. 53E128M32D2DS-046 WT:A TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -30°C ~ 85°C (TC) | Surface Mount | 200-WFBGA | MT53E128 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E128M32D2DS-046WT:ATR | EAR99 | 8542.32.0036 | 2,000 | 2.133 GHz | Volatile | 4Gbit | DRAM | 128M x 32 | - | - | ||||||
| Micron Technology Inc. 53E128M32D2DS-053 AIT:A TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 95°C (TC) | Surface Mount | 200-WFBGA | MT53E128 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E128M32D2DS-053AIT:ATR | EAR99 | 8542.32.0036 | 2,000 | 1.866 GHz | Volatile | 4Gbit | DRAM | 128M x 32 | - | - | ||||||
| Micron Technology Inc. 53E128M32D2DS-053 WT:A TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -30°C ~ 85°C (TC) | Surface Mount | 200-WFBGA | MT53E128 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E128M32D2DS-053WT:ATR | EAR99 | 8542.32.0036 | 2,000 | 1.866 GHz | Volatile | 4Gbit | DRAM | 128M x 32 | - | - | ||||||
| Micron Technology Inc. 53E1536M32D4DT-046 AAT:A TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Obsolete | -40°C ~ 105°C (TC) | MT53E1536 | SDRAM - Mobile LPDDR4 | 1.1V | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E1536M32D4DT-046AAT:ATR | OBSOLETE | 0000.00.0000 | 2,000 | 2.133 GHz | Volatile | 48Gbit | DRAM | 1.5G x 32 | - | - | |||||||||
|
Micron Technology Inc. 53E1G64D4SQ-046 AIT:A TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Obsolete | -40°C ~ 95°C (TC) | MT53E1G64 | SDRAM - Mobile LPDDR4 | 1.1V | ROHS3 Compliant | 3 (168 Hours) | MT53E1G64D4SQ-046AIT:ATR | OBSOLETE | 0000.00.0000 | 2,000 | 2.133 GHz | Volatile | 64Gbit | DRAM | 1G x 64 | - | - | |||||||||
| Micron Technology Inc. 53E256M16D1DS-046 AAT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 105°C (TC) | MT53E256 | SDRAM - Mobile LPDDR4 | 1.1V | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E256M16D1DS-046AAT:BTR | 0000.00.0000 | 2,000 | 2.133 GHz | Volatile | 4Gbit | DRAM | 256M x 16 | - | - | ||||||||||
| Micron Technology Inc. 53E256M16D1DS-046 AIT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Obsolete | -40°C ~ 95°C (TC) | MT53E256 | SDRAM - Mobile LPDDR4 | 1.1V | ROHS3 Compliant | 3 (168 Hours) | MT53E256M16D1DS-046AIT:BTR | OBSOLETE | 2,000 | 2.133 GHz | Volatile | 4Gbit | DRAM | 256M x 16 | - | - | |||||||||||
| Micron Technology Inc. 53E256M16D1DS-046 WT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -30°C ~ 85°C (TC) | MT53E256 | SDRAM - Mobile LPDDR4 | 1.1V | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E256M16D1DS-046WT:BTR | EAR99 | 8542.32.0036 | 2,000 | 2.133 GHz | Volatile | 4Gbit | DRAM | 256M x 16 | - | - | ||||||||
| Micron Technology Inc. 53E256M32D2DS-046 AIT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Last Time Buy | -40°C ~ 95°C (TC) | Surface Mount | 200-WFBGA | MT53E256 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E256M32D2DS-046AIT:BTR | EAR99 | 8542.32.0036 | 2,000 | 2.133 GHz | Volatile | 8Gbit | DRAM | 256M x 32 | - | - | ||||||
| Micron Technology Inc. 53E256M32D2DS-046 IT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -40°C ~ 95°C (TC) | Surface Mount | 200-WFBGA | MT53E256 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E256M32D2DS-046IT:BTR | EAR99 | 8542.32.0036 | 2,000 | 2.133 GHz | Volatile | 8Gbit | DRAM | 256M x 32 | - | - | |||||
| Micron Technology Inc. 53E256M32D2DS-053 AUT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Last Time Buy | -40°C ~ 125°C (TC) | Surface Mount | 200-WFBGA | MT53E256 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E256M32D2DS-053AUT:BTR | EAR99 | 8542.32.0036 | 2,000 | 1.866 GHz | Volatile | 8Gbit | DRAM | 256M x 32 | - | - | ||||||
| Micron Technology Inc. 53E256M32D2DS-053 WT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Obsolete | -30°C ~ 85°C (TC) | Surface Mount | 200-WFBGA | MT53E256 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | download | ROHS3 Compliant | 3 (168 Hours) | MT53E256M32D2DS-053WT:BTR | EAR99 | 8542.32.0036 | 2,000 | 1.866 GHz | Volatile | 8Gbit | DRAM | 256M x 32 | - | - | ||||||
|
Micron Technology Inc. 53E256M64D4NZ-053 WT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Obsolete | -30°C ~ 85°C (TC) | MT53E256 | SDRAM - Mobile LPDDR4 | 1.1V | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E256M64D4NZ-053WT:BTR | OBSOLETE | 0000.00.0000 | 1,000 | 1.866 GHz | Volatile | 16Gbit | DRAM | 256M x 64 | - | - | ||||||||
| Micron Technology Inc. 53E2G32D4DT-046 AAT:A TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 105°C (TC) | MT53E2G32 | SDRAM - Mobile LPDDR4 | 1.1V | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E2G32D4DT-046AAT:ATR | 0000.00.0000 | 2,000 | 2.133 GHz | Volatile | 64Gbit | DRAM | 2G x 32 | - | - |
