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| Compare | Image | Name | Manufacturer | Quantity | Weight(Kg) | Size(LxWxH) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Voltage - Supply | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Clock Frequency | Memory Type | Memory Size | Access Time | Memory Format | Memory Organization | Memory Interface | Write Cycle Time - Word, Page | Transfer Rate (Mb/s, MT/s, MHz) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Micron Technology Inc. 53E256M32D2DS-046 IT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Active | -40°C ~ 95°C (TC) | Surface Mount | 200-WFBGA | MT53E256 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E256M32D2DS-046IT:B | EAR99 | 8542.32.0036 | 1,360 | 2.133 GHz | Volatile | 8Gbit | DRAM | 256M x 32 | - | - | ||||||
| Micron Technology Inc. 53E256M32D2DS-053 WT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Obsolete | -30°C ~ 85°C (TC) | Surface Mount | 200-WFBGA | MT53E256 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | download | ROHS3 Compliant | 3 (168 Hours) | MT53E256M32D2DS-053WT:B | EAR99 | 8542.32.0036 | 1,360 | 1.866 GHz | Volatile | 8Gbit | DRAM | 256M x 32 | - | - | |||||||
| Micron Technology Inc. 53E2G32D4DT-046 AAT:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 105°C (TC) | MT53E2G32 | SDRAM - Mobile LPDDR4 | 1.1V | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E2G32D4DT-046AAT:A | 0000.00.0000 | 1,360 | 2.133 GHz | Volatile | 64Gbit | DRAM | 2G x 32 | - | - | |||||||||||
| Micron Technology Inc. 53E384M32D2DS-046 AIT:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Obsolete | -40°C ~ 95°C (TC) | Surface Mount | 200-WFBGA | MT53E384 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E384M32D2DS-046AIT:E | EAR99 | 8542.32.0036 | 1,360 | 2.133 GHz | Volatile | 12Gbit | DRAM | 384M x 32 | - | - | |||||||
| Micron Technology Inc. 53E384M32D2DS-046 WT:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Obsolete | -30°C ~ 85°C (TC) | Surface Mount | 200-WFBGA | MT53E384 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | MT53E384M32D2DS-046WT:E | EAR99 | 8542.32.0036 | 1,360 | 2.133 GHz | Volatile | 12Gbit | DRAM | 384M x 32 | - | - | ||||||||
| Micron Technology Inc. 53E384M32D2DS-053 AIT:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 95°C (TC) | Surface Mount | 200-WFBGA | MT53E384 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E384M32D2DS-053AIT:E | EAR99 | 8542.32.0036 | 1,360 | 1.866 GHz | Volatile | 12Gbit | DRAM | 384M x 32 | - | - | |||||||
| Micron Technology Inc. 53E384M32D2DS-053 AUT:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Obsolete | -40°C ~ 125°C (TC) | Surface Mount | 200-WFBGA | MT53E384 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E384M32D2DS-053AUT:E | EAR99 | 8542.32.0036 | 1,360 | 1.866 GHz | Volatile | 12Gbit | DRAM | 384M x 32 | - | - | |||||||
 |
Micron Technology Inc. 53E512M64D4NK-046 WT:D | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Obsolete | -30°C ~ 85°C (TC) | Surface Mount | 366-WFBGA | MT53E512 | SDRAM - Mobile LPDDR4 | 1.1V | 366-WFBGA (15x15) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E512M64D4NK-046WT:D | OBSOLETE | 0000.00.0000 | 1,190 | 2.133 GHz | Volatile | 32Gbit | DRAM | 512M x 64 | - | - | ||||||
|
Micron Technology Inc. 53E512M64D4NK-053 WT:D | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Obsolete | -30°C ~ 85°C (TC) | Surface Mount | 366-WFBGA | MT53E512 | SDRAM - Mobile LPDDR4 | 1.1V | 366-WFBGA (15x15) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E512M64D4NK-053WT:D | OBSOLETE | 0000.00.0000 | 1,190 | 1.866 GHz | Volatile | 32Gbit | DRAM | 512M x 64 | - | - | ||||||
| Micron Technology Inc. 53E768M32D4DT-046 AAT:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 105°C (TC) | Surface Mount | 200-VFBGA | MT53E768 | SDRAM - Mobile LPDDR4 | 1.1V | 200-VFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E768M32D4DT-046AAT:E | EAR99 | 8542.32.0036 | 1,360 | 2.133 GHz | Volatile | 24Gbit | DRAM | 768M x 32 | - | - | |||||||
| Micron Technology Inc. 53E768M32D4DT-053 AAT:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 125°C (TC) | Surface Mount | 200-VFBGA | MT53E768 | SDRAM - Mobile LPDDR4 | 1.1V | 200-VFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | MT53E768M32D4DT-053AAT:E | EAR99 | 8542.32.0036 | 1,360 | 1.866 GHz | Volatile | 24Gbit | DRAM | 768M x 32 | - | - | |||||||
|
Micron Technology Inc. 53E768M64D4SQ-046 AAT:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Obsolete | -40°C ~ 105°C (TC) | MT53E768 | SDRAM - Mobile LPDDR4 | 1.1V | ROHS3 Compliant | 3 (168 Hours) | MT53E768M64D4SQ-046AAT:A | OBSOLETE | 0000.00.0000 | 1,360 | 2.133 GHz | Volatile | 48Gbit | DRAM | 768M x 64 | - | - | ||||||||||
|
Micron Technology Inc. 53E768M64D4SQ-046 AIT:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Obsolete | -40°C ~ 95°C (TC) | MT53E768 | SDRAM - Mobile LPDDR4 | 1.1V | ROHS3 Compliant | 3 (168 Hours) | MT53E768M64D4SQ-046AIT:A | OBSOLETE | 0000.00.0000 | 1,360 | 2.133 GHz | Volatile | 48Gbit | DRAM | 768M x 64 | - | - | ||||||||||
|
Micron Technology Inc. MTA16ATF2G64AZ-3G2J1 | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Obsolete | 288-UDIMM | MTA16 | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8473.30.1140 | 100 | DDR4 SDRAM | 16GB | 3200 | |||||||||||||||||
| Micron Technology Inc. FC4GLGDQ-AIT Z | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Obsolete | -40°C ~ 85°C (TA) | Surface Mount | 100-LBGA | MTFC4 | FLASH - NAND | 2.7V ~ 3.6V | 100-LBGA (14x18) | ROHS3 Compliant | 3 (168 Hours) | MTFC4GLGDQ-AITZ | OBSOLETE | 980 | Non-Volatile | 32Gbit | FLASH | 4G x 8 | MMC | - | ||||||||||
|
Micron Technology Inc. 29F4G08ABBFAM70A3WC1 | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Active | 0°C ~ 70°C (TA) | Surface Mount | Die | MT29F4G08 | FLASH - NAND (SLC) | 1.7V ~ 1.95V | Die | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 8542.32.0071 | 1 | Non-Volatile | 4Gbit | FLASH | 512M x 8 | Parallel | - | |||||||||
| Micron Technology Inc. 29F4G01ABAFDWB-IT:F TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -40°C ~ 85°C (TA) | Surface Mount | 8-UDFN | MT29F4G01 | FLASH - NAND (SLC) | 2.7V ~ 3.6V | 8-UPDFN (8x6) (MLP8) | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | MT29F4G01ABAFDWB-IT:FTR | 8542.32.0071 | 2,000 | Non-Volatile | 4Gbit | FLASH | 4G x 1 | SPI | - | |||||||||
|
Micron Technology Inc. 29F64G08CBAAAL74A3WC1P-V | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Obsolete | 0°C ~ 70°C (TA) | Surface Mount | Die | MT29F64G08 | FLASH - NAND (MLC) | 2.7V ~ 3.6V | Die | 1 (Unlimited) | OBSOLETE | 1 | Non-Volatile | 64Gbit | FLASH | 8G x 8 | Parallel | - | |||||||||||
|
Micron Technology Inc. 42L16M32D1HE-18 IT:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Active | -40°C ~ 85°C (TC) | Surface Mount | 134-VFBGA | MT42L16M32 | SDRAM - Mobile LPDDR2 | 1.14V ~ 1.3V | 134-VFBGA (10x11.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 557-MT42L16M32D1HE-18IT:E | EAR99 | 8542.32.0028 | 1,680 | 533 MHz | Volatile | 512Mbit | DRAM | 16M x 32 | Parallel | 15ns | ||||||
|
Micron Technology Inc. 42L64M32D2HE-18 IT:D | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 85°C (TC) | Surface Mount | 134-VFBGA | MT42L64M32 | SDRAM - Mobile LPDDR2 | 1.14V ~ 1.3V | 134-VFBGA (10x11.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 557-MT42L64M32D2HE-18IT:D | EAR99 | 8542.32.0036 | 2,100 | 533 MHz | Volatile | 2Gbit | DRAM | 64M x 32 | Parallel | 15ns | ||||||
| Micron Technology Inc. 29F8G08ADAFAWP-AIT:F | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 105°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | MT29F8G08 | FLASH - NAND (SLC) | 2.7V ~ 3.6V | 48-TSOP I | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 3A991B1A | 8542.32.0071 | 1 | Non-Volatile | 8Gbit | FLASH | 1G x 8 | Parallel | - | |||||||||
| Micron Technology Inc. 29F4G08ABAFAWP-IT:F | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Active | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | MT29F4G08 | FLASH - NAND (SLC) | 2.7V ~ 3.6V | 48-TSOP I | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 3A991B1A | 8542.32.0071 | 1 | Non-Volatile | 4Gbit | FLASH | 512M x 8 | Parallel | - | |||||||||
| Micron Technology Inc. 29F8G08ADAFAWP-AAT:F | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 105°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | MT29F8G08 | FLASH - NAND (SLC) | 2.7V ~ 3.6V | 48-TSOP I | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 3A991B1A | 8542.32.0071 | 1 | Non-Volatile | 8Gbit | FLASH | 1G x 8 | Parallel | - | |||||||||
| Micron Technology Inc. 29F4G01ABBFDWB-IT:F | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Active | -40°C ~ 85°C (TA) | Surface Mount | 8-UDFN | MT29F4G01 | FLASH - NAND (SLC) | 1.7V ~ 1.95V | 8-UPDFN (8x6) (MLP8) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 3A991B1A | 8542.32.0071 | 1,920 | 83 MHz | Non-Volatile | 4Gbit | FLASH | 4G x 1 | SPI | - | ||||||||
| Micron Technology Inc. 29F4G08ABAFAWP-AAT:F | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tray | Active | -40°C ~ 105°C (TC) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | MT29F4G08 | FLASH - NAND (SLC) | 2.7V ~ 3.6V | 48-TSOP I | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 557-MT29F4G08ABAFAWP-AAT:F | 3A991B1A | 8542.32.0071 | 1 | Non-Volatile | 4Gbit | FLASH | 512M x 8 | Parallel | - | ||||||||
|
Micron Technology Inc. 25QL128ABB1ESE-0AUT | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | MT25QL128 | FLASH - NOR | 2.7V ~ 3.6V | 8-SO | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 3A991B1A | 8542.32.0071 | 1,500 | 133 MHz | Non-Volatile | 128Mbit | 5 ns | FLASH | 16M x 8 | SPI | 1.8ms | ||||||
|
Micron Technology Inc. 53D1536M32D6BE-046 WT:D | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Active | -30°C ~ 85°C (TC) | - | - | MT53D1536 | SDRAM - Mobile LPDDR4 | 1.1V | - | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 557-MT53D1536M32D6BE-046WT:D | 1,360 | 2.133 GHz | Volatile | 48Gbit | DRAM | 1.5G x 32 | - | - | ||||||||
|
Micron Technology Inc. 53D1024M32D4BD-046 WT:D TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -30°C ~ 85°C (TC) | - | - | MT53D1024 | SDRAM - Mobile LPDDR4 | 1.1V | - | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 557-MT53D1024M32D4BD-046WT:DTR | 2,000 | 2.133 GHz | Volatile | 32Gbit | DRAM | 1G x 32 | - | - | ||||||||
|
Micron Technology Inc. 41K2G4RKB-107 C:N | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | TwinDie™ | Tray | Obsolete | 0°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | MT41K2G4 | SDRAM - DDR3L | 1.283V ~ 1.45V | 78-FBGA (8x10.5) | download | ROHS3 Compliant | 3 (168 Hours) | 557-MT41K2G4RKB-107C:N | OBSOLETE | 1,440 | 933 MHz | Volatile | 8Gbit | 20 ns | DRAM | 2G x 4 | Parallel | 15ns | ||||||
|
Micron Technology Inc. 25QU128ABA1ESE-MSIT TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Obsolete | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | MT25QU128 | FLASH - NOR | 1.7V ~ 2V | 8-SOP2 | ROHS3 Compliant | 3 (168 Hours) | MT25QU128ABA1ESE-MSITTR | 3A991B1A | 8542.32.0071 | 1,500 | 133 MHz | Non-Volatile | 128Mbit | FLASH | 16M x 8 | SPI | 8ms, 2.8ms |
