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| Compare | Image | Name | Manufacturer | Quantity | Weight(Kg) | Size(LxWxH) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Voltage - Supply | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Clock Frequency | Memory Type | Memory Size | Access Time | Memory Format | Memory Organization | Memory Interface | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Micron Technology Inc. 53D384M32D2DS-046 AAT:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Obsolete | -40°C ~ 105°C (TC) | Surface Mount | 200-WFBGA | MT53D384 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | OBSOLETE | 0000.00.0000 | 2,000 | 2.133 GHz | Volatile | 12Gbit | DRAM | 384M x 32 | - | - | ||||||||
| Micron Technology Inc. 53D384M32D2DS-046 AAT:E TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 105°C (TC) | Surface Mount | 200-WFBGA | MT53D384 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | EAR99 | 8542.32.0036 | 2,000 | 2.133 GHz | Volatile | 12Gbit | DRAM | 384M x 32 | - | - | |||||||
| Micron Technology Inc. 53D384M32D2DS-046 AIT:E TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 95°C (TC) | Surface Mount | 200-WFBGA | MT53D384 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | EAR99 | 8542.32.0036 | 2,000 | 2.133 GHz | Volatile | 12Gbit | DRAM | 384M x 32 | - | - | |||||||
| Micron Technology Inc. 53D384M32D2DS-046 AUT:E TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 125°C (TC) | Surface Mount | 200-WFBGA | MT53D384 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | EAR99 | 8542.32.0036 | 2,000 | 2.133 GHz | Volatile | 12Gbit | DRAM | 384M x 32 | - | - | |||||||
| Micron Technology Inc. 53D384M32D2DS-046 WT:E TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -30°C ~ 85°C (TC) | Surface Mount | 200-WFBGA | MT53D384 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | EAR99 | 8542.32.0036 | 2,000 | 2.133 GHz | Volatile | 12Gbit | DRAM | 384M x 32 | - | - | |||||||
| Micron Technology Inc. 53D384M32D2DS-053 AAT ES:E TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 105°C (TC) | Surface Mount | 200-WFBGA | MT53D384 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | EAR99 | 8542.32.0036 | 2,000 | 1.866 GHz | Volatile | 12Gbit | DRAM | 384M x 32 | - | - | |||||||
| Micron Technology Inc. 53D384M32D2DS-053 AIT:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Obsolete | -40°C ~ 95°C (TC) | Surface Mount | 200-WFBGA | MT53D384 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | OBSOLETE | 0000.00.0000 | 2,000 | 1.866 GHz | Volatile | 12Gbit | DRAM | 384M x 32 | - | - | ||||||||
| Micron Technology Inc. 53D384M32D2DS-053 AUT:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Obsolete | -40°C ~ 95°C (TC) | Surface Mount | 200-WFBGA | MT53D384 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | OBSOLETE | 0000.00.0000 | 2,000 | 1.866 GHz | Volatile | 12Gbit | DRAM | 384M x 32 | - | - | ||||||||
| Micron Technology Inc. 53D384M32D2DS-053 WT ES:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Obsolete | -30°C ~ 85°C (TC) | Surface Mount | 200-WFBGA | MT53D384 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | OBSOLETE | 0000.00.0000 | 2,000 | 1.866 GHz | Volatile | 12Gbit | DRAM | 384M x 32 | - | - | ||||||||
| Micron Technology Inc. 53D384M32D2DS-053 XT:E TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Obsolete | -30°C ~ 105°C (TC) | Surface Mount | 200-WFBGA | MT53D384 | SDRAM - Mobile LPDDR4 | 1.1V | 200-WFBGA (10x14.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | EAR99 | 8542.32.0036 | 2,000 | 1.866 GHz | Volatile | 12Gbit | DRAM | 384M x 32 | - | - | |||||||
 |
Micron Technology Inc. 53D1024M32D4BD-046 WT:D | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Active | -30°C ~ 85°C (TC) | - | - | MT53D1024 | SDRAM - Mobile LPDDR4 | 1.1V | - | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 557-MT53D1024M32D4BD-046WT:D | 1,360 | 2.133 GHz | Volatile | 32Gbit | DRAM | 1G x 32 | - | - | |||||||
|
Micron Technology Inc. 41K2G4RKB-107 C:N TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | TwinDie™ | Tape & Reel (TR) | Obsolete | 0°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | MT41K2G4 | SDRAM - DDR3L | 1.283V ~ 1.45V | 78-FBGA (8x10.5) | download | ROHS3 Compliant | 3 (168 Hours) | 557-MT41K2G4RKB-107C:NTR | OBSOLETE | 2,000 | 933 MHz | Volatile | 8Gbit | 20 ns | DRAM | 2G x 4 | Parallel | 15ns | |||||
|
Micron Technology Inc. 42L32M32D1HE-18 IT:D | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 85°C (TC) | Surface Mount | 134-VFBGA | MT42L32M32 | SDRAM - Mobile LPDDR2 | 1.14V ~ 1.3V | 134-VFBGA (10x11.5) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 557-MT42L32M32D1HE-18IT:D | EAR99 | 8542.32.0032 | 1,680 | 533 MHz | Volatile | 1Gbit | DRAM | 32M x 32 | Parallel | 15ns | |||||
|
Micron Technology Inc. 62F768M64D4EJ-031 AAT:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Active | MT62F768 | REACH Unaffected | 557-MT62F768M64D4EJ-031AAT:A | 1,190 | ||||||||||||||||||||||
|
Micron Technology Inc. FC64GAPALHT-AAT | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Last Time Buy | -40°C ~ 105°C (TA) | MTFC64 | FLASH - NAND | - | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 557-MTFC64GAPALHT-AAT | EAR99 | 8542.32.0071 | 980 | Non-Volatile | 512Gbit | FLASH | 64G x 8 | MMC | - | |||||||||
| Micron Technology Inc. FC64GASAONS-AIT ES | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Obsolete | -40°C ~ 85°C (TA) | Surface Mount | 153-TFBGA | MTFC64 | FLASH - NAND | 2.7V ~ 3.6V | 153-TFBGA (11.5x13) | 557-MTFC64GASAONS-AITES | OBSOLETE | 1,520 | 52 MHz | Non-Volatile | 512Gbit | FLASH | 64G x 8 | MMC | - | ||||||||||
|
Micron Technology Inc. 53E4D1BEG-DC | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Obsolete | MT53E4 | 557-MT53E4D1BEG-DC | OBSOLETE | 1,360 | ||||||||||||||||||||||
|
Micron Technology Inc. FC16GAPALHT-AAT | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Last Time Buy | -40°C ~ 105°C (TA) | MTFC16 | FLASH - NAND | - | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 557-MTFC16GAPALHT-AAT | 3A991B1A | 8542.32.0071 | 980 | Non-Volatile | 128Gbit | FLASH | 16G x 8 | MMC | - | |||||||||
| Micron Technology Inc. 29F2T08EMHAFJ4-3ITF:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Active | -40°C ~ 85°C (TA) | Surface Mount | 132-VBGA | MT29F2T08 | FLASH - NAND (TLC) | 2.5V ~ 3.6V | 132-VBGA (12x18) | 3 (168 Hours) | REACH Unaffected | 557-MT29F2T08EMHAFJ4-3ITF:A | 8542.32.0071 | 1,120 | 333 MHz | Non-Volatile | 2Tbit | FLASH | 256G x 8 | Parallel | - | ||||||||
| Micron Technology Inc. 29F1T08EEHBFJ4-T:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Obsolete | 0°C ~ 70°C (TA) | Surface Mount | 132-VBGA | MT29F1T08 | FLASH - NAND (TLC) | 1.7V ~ 1.95V | 132-VBGA (12x18) | 557-MT29F1T08EEHBFJ4-T:B | OBSOLETE | 8542.32.0071 | 1,120 | Non-Volatile | 1Tbit | FLASH | 128G x 8 | Parallel | - | ||||||||||
|
Micron Technology Inc. 53E4D1ADE-DC | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Active | MT53E4 | REACH Unaffected | 557-MT53E4D1ADE-DC | 1,360 | ||||||||||||||||||||||
|
Micron Technology Inc. 53E2D1BCY-DC | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Active | MT53E2 | REACH Unaffected | 557-MT53E2D1BCY-DC | 1,360 | ||||||||||||||||||||||
|
Micron Technology Inc. 62F768M64D4EJ-031 AUT:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Active | MT62F768 | REACH Unaffected | 557-MT62F768M64D4EJ-031AUT:A | 1,190 | ||||||||||||||||||||||
| Micron Technology Inc. 29F2T08EMHBFJ4-T:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Obsolete | 0°C ~ 70°C (TA) | Surface Mount | 132-VBGA | MT29F2T08 | FLASH - NAND (TLC) | 1.7V ~ 1.95V | 132-VBGA (12x18) | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 557-MT29F2T08EMHBFJ4-T:B | OBSOLETE | 8542.32.0071 | 1,120 | Non-Volatile | 2Tbit | FLASH | 256G x 8 | Parallel | - | |||||||
|
Micron Technology Inc. 53E1DBDS-DC | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Active | MT53E1 | REACH Unaffected | 557-MT53E1DBDS-DC | 1,360 | ||||||||||||||||||||||
| Micron Technology Inc. 29F256G08EBHBFJ4-3ITF:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Active | -40°C ~ 85°C (TA) | Surface Mount | 132-VBGA | MT29F256G08 | FLASH - NAND (TLC) | 2.5V ~ 3.6V | 132-VBGA (12x18) | 3 (168 Hours) | REACH Unaffected | 557-MT29F256G08EBHBFJ4-3ITF:B | 1,120 | 333 MHz | Non-Volatile | 256Gbit | FLASH | 32G x 8 | Parallel | - | |||||||||
| Micron Technology Inc. 29F1T08EEHAFJ4-3ITF:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Active | -40°C ~ 85°C (TA) | Surface Mount | 132-VBGA | MT29F1T08 | FLASH - NAND | 2.5V ~ 3.6V | 132-VBGA (12x18) | 3 (168 Hours) | REACH Unaffected | 557-MT29F1T08EEHAFJ4-3ITF:A | 1,120 | 333 MHz | Non-Volatile | 1Tbit | FLASH | 128G x 8 | Parallel | - | |||||||||
| Micron Technology Inc. 29F2G08ABAGAWP-AIT:G | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Bulk | Active | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | MT29F2G08 | FLASH - NAND (SLC) | 2.7V ~ 3.6V | 48-TSOP I | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 557-MT29F2G08ABAGAWP-AIT:G | 8542.32.0071 | 960 | Non-Volatile | 2Gbit | 20 ns | FLASH | 256M x 8 | Parallel | 20ns | |||||||
|
Micron Technology Inc. 62F1G64D8CH-036 WT:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Obsolete | -25°C ~ 85°C | MT62F1G64 | SDRAM - Mobile LPDDR5 | 1.05V | 557-MT62F1G64D8CH-036WT:A | OBSOLETE | 8542.32.0071 | 1,190 | 2.75 GHz | Non-Volatile | 64Gbit | FLASH | 1G x 64 | - | - | |||||||||||
| Micron Technology Inc. 29F2T08EMHBFJ4-R:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Obsolete | 0°C ~ 70°C (TA) | Surface Mount | 132-VBGA | MT29F2T08 | FLASH - NAND (TLC) | 1.7V ~ 1.95V | 132-VBGA (12x18) | 557-MT29F2T08EMHBFJ4-R:B | OBSOLETE | 8542.32.0071 | 1,120 | Non-Volatile | 2Tbit | FLASH | 256G x 8 | Parallel | - |
