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ALL Products
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Circuit Protection
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Connectors, Interconnects
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RF/IF and RFID
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Sensors, Transducers
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- Color Sensors - Industrial
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- Humidity, Moisture Sensors)
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Switches
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| Compare | Image | Name | Manufacturer | Quantity | Weight(Kg) | Size(LxWxH) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Technology | Voltage - Supply | Supplier Device Package | DataSheet | RoHS Status | Other Names | ECCN | Standard Package | Clock Frequency | Memory Type | Memory Size | Access Time | Memory Format | Memory Organization | Memory Interface | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
Micron Technology Inc. 62F2G64D8EK-023 WT ES:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | -25°C ~ 85°C | Surface Mount | 441-TFBGA | SDRAM - Mobile LPDDR5 | 1.05V | 441-TFBGA (14x14) | 557-MT62F2G64D8EK-023WTES:B | 1 | 4.266 GHz | Volatile | 128Gbit | DRAM | 2G x 64 | Parallel | - | |||||||
|
Micron Technology Inc. 53E512M64D2HJ-046 AUT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | -40°C ~ 125°C (TC) | Surface Mount | 556-TFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 556-WFBGA (12.4x12.4) | 557-MT53E512M64D2HJ-046AUT:B | 1 | 2.133 GHz | Volatile | 32Gbit | 3.5 ns | DRAM | 512M x 64 | Parallel | 18ns | ||||||
|
Micron Technology Inc. 53E128M32D2FW-046 AIT:A TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT53E128M32D2FW-046AIT:ATR | 2,000 | ||||||||||||||||||||
|
Micron Technology Inc. 60B2G8HB-48B:A TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 0°C ~ 95°C (TC) | Surface Mount | 82-VFBGA | SDRAM - DDR5 | - | 82-VFBGA (9x11) | 557-MT60B2G8HB-48B:ATR | 3,000 | 2.4 GHz | Volatile | 16Gbit | 16 ns | DRAM | 2G x 8 | POD | - | ||||||
|
Micron Technology Inc. 29F2T08EELCHD4-M:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT29F2T08EELCHD4-M:CTR | 2,000 | ||||||||||||||||||||
|
Micron Technology Inc. 29F1T08EELEEJ4-M:E TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT29F1T08EELEEJ4-M:ETR | 2,000 | ||||||||||||||||||||
|
Micron Technology Inc. 62F4G32D8DV-023 WT ES:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | -25°C ~ 85°C | - | - | SDRAM - Mobile LPDDR5 | - | - | 557-MT62F4G32D8DV-023WTES:BTR | 2,000 | 4.266 GHz | Volatile | 128Gbit | DRAM | 4G x 32 | Parallel | - | |||||||
|
Micron Technology Inc. 62F1536M32D4DS-026 WT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT62F1536M32D4DS-026WT:BTR | 2,000 | ||||||||||||||||||||
|
Micron Technology Inc. 53E512M64D2HJ-046 AIT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | -40°C ~ 95°C (TC) | Surface Mount | 556-TFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 556-WFBGA (12.4x12.4) | 557-MT53E512M64D2HJ-046AIT:B | 1 | 2.133 GHz | Volatile | 32Gbit | 3.5 ns | DRAM | 512M x 64 | Parallel | 18ns | ||||||
|
Micron Technology Inc. 53E1G32D4NQ-053 RS WT:J | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MT53E1G32D4NQ-053RSWT:J | 1 | ||||||||||||||||||||
|
Micron Technology Inc. 29GZ6A6BPIET-046AAT.112 | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | -40°C ~ 105°C (TA) | Surface Mount | 149-VFBGA | FLASH - NAND (SLC), DRAM - LPDDR4 | 1.06V ~ 1.17V, 1.7V ~ 1.95V | 149-VFBGA (8x9.5) | 557-MT29GZ6A6BPIET-046AAT.112 | 1 | 2.133 GHz | Non-Volatile, Volatile | 8Gbit (NAND), 8Gbit (LPDDR4) | 25 ns | FLASH, RAM | 1G x 8 (NAND), 512M x 16 (LPDDR4) | ONFI | 20ns, 30ns | ||||||
|
Micron Technology Inc. 62F4G32D8DV-023 WT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | -25°C ~ 85°C | - | - | SDRAM - Mobile LPDDR5 | - | - | 557-MT62F4G32D8DV-023WT:B | 1 | 4.266 GHz | Volatile | 128Gbit | DRAM | 4G x 32 | Parallel | - | |||||||
|
Micron Technology Inc. 29F8T08EQLCHL5-QA:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MT29F8T08EQLCHL5-QA:C | 1 | ||||||||||||||||||||
|
Micron Technology Inc. 29VZZZCD9GQKPR-046 W.12L | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MT29VZZZCD9GQKPR-046W.12L | 1 | ||||||||||||||||||||
|
Micron Technology Inc. 62F1G32D2DS-023 AUT:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | - | Surface Mount | 200-WFBGA | SDRAM - Mobile LPDDR5 | 1.05V | 200-WFBGA (10x14.5) | 557-MT62F1G32D2DS-023AUT:C | 1 | 4.266 GHz | Volatile | 32Gbit | DRAM | 1G x 32 | Parallel | - | |||||||
|
Micron Technology Inc. 29F1T08EBLCHD4-R:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT29F1T08EBLCHD4-R:CTR | 2,000 | ||||||||||||||||||||
|
Micron Technology Inc. 29GZ5A5BPGGA-046AIT.87J TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 85°C (TA) | Surface Mount | 149-WFBGA | FLASH - NAND (SLC), DRAM - LPDDR4 | 1.06V ~ 1.17V, 1.7V ~ 1.95V | 149-WFBGA (8x9.5) | 557-MT29GZ5A5BPGGA-046AIT.87JTR | 2,000 | Non-Volatile, Volatile | 4Gbit | 25 ns | FLASH, RAM | 512M x 8 | ONFI | 30ns | |||||||
|
Micron Technology Inc. 29F4T08EULCEM4-QJ:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MT29F4T08EULCEM4-QJ:C | 1 | ||||||||||||||||||||
|
Micron Technology Inc. 29F1T08EBLCHD4-M:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT29F1T08EBLCHD4-M:CTR | 2,000 | ||||||||||||||||||||
|
Micron Technology Inc. 40A256M16LY-075:F TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 0°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | SDRAM - DDR4 | 1.14V ~ 1.26V | 96-FBGA (7.5x13.5) | download | 557-MT40A256M16LY-075:FTR | 2,000 | 1.333 GHz | Volatile | 4Gbit | 19 ns | DRAM | 256M x 16 | POD | 15ns | |||||
|
Micron Technology Inc. 29F8T08EULCHD5-T:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | 557-MT29F8T08EULCHD5-T:C | 1 | ||||||||||||||||||||
|
Micron Technology Inc. 62F1G64D4EK-023 WT ES:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT62F1G64D4EK-023WTES:CTR | 2,000 | ||||||||||||||||||||
|
Micron Technology Inc. FC256GARATEK-WT | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Box | Active | -25°C ~ 85°C | Surface Mount | 153-VFBGA | FLASH - NAND (SLC) | - | 153-VFBGA (11.5x13) | 557-MTFC256GARATEK-WT | 1 | Non-Volatile | 2Tbit | FLASH | 256G x 8 | UFS 3.1 | - | ||||||||
|
Micron Technology Inc. 30AZZZDDB0TPWL-031 W.19R TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Active | 557-MT30AZZZDDB0TPWL-031W.19RTR | 2,000 | ||||||||||||||||||||
|
Micron Technology Inc. 40A1G16TD-062E AAT:F | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | -40°C ~ 105°C (TC) | - | - | SDRAM - DDR4 | 1.14V ~ 1.26V | - | 557-MT40A1G16TD-062EAAT:F | 1 | 1.6 GHz | Volatile | 16Gbit | 19 ns | DRAM | 1G x 16 | POD | 15ns | ||||||
|
Micron Technology Inc. 53E768M64D4HJ-046 AIT:A TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Obsolete | -40°C ~ 95°C (TC) | Surface Mount | 556-TFBGA | SDRAM - Mobile LPDDR4 | 1.06V ~ 1.17V | 556-WFBGA (12.4x12.4) | ROHS3 Compliant | 557-MT53E768M64D4HJ-046AIT:ATR | OBSOLETE | 1 | 2.133 GHz | Volatile | 48Gbit | 3.5 ns | DRAM | 768M x 64 | Parallel | 18ns | ||||
| Micron Technology Inc. 53E768M32D4DE-046 WT:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Active | -25°C ~ 85°C | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4 | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | 557-MT53E768M32D4DE-046WT:E | 1 | 2.133 GHz | Volatile | 24Gbit | 3.5 ns | DRAM | 768M x 32 | Parallel | 18ns | |||||||
|
Micron Technology Inc. 53E1G32D4NQ-046 WT:F TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Tape & Reel (TR) | Obsolete | -30°C ~ 85°C | Surface Mount | 200-VFBGA | SDRAM - Mobile LPDDR4 | 1.06V ~ 1.17V | 200-VFBGA (10x14.5) | ROHS3 Compliant | 557-MT53E1G32D4NQ-046WT:FTR | OBSOLETE | 1 | 2.133 GHz | Volatile | 32Gbit | DRAM | 1G x 32 | - | ||||||
| Micron Technology Inc. 53E384M32D2FW-046 WT:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | - | Bulk | Active | -25°C ~ 85°C | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4 | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | ROHS3 Compliant | 557-MT53E384M32D2FW-046WT:E | 1 | 2.133 GHz | Volatile | 12Gbit | 3.5 ns | DRAM | 384M x 32 | Parallel | 18ns | ||||||
| Micron Technology Inc. 53E768M64D4HJ-046 AIT:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
/image/Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 95°C (TC) | Surface Mount | 556-TFBGA | SDRAM - Mobile LPDDR4 | 1.06V ~ 1.17V | 556-WFBGA (12.4x12.4) | ROHS3 Compliant | 557-MT53E768M64D4HJ-046AIT:C | 1 | 2.133 GHz | Volatile | 48Gbit | 3.5 ns | DRAM | 768M x 64 | Parallel | 18ns |
